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Chin. Phys. B, 2008, Vol. 17(11): 4305-4311    DOI: 10.1088/1674-1056/17/11/057

Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction

Hao Lei (郝雷)aWang Jun(汪军)b
a National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; b Department of Physics, Southeast University, Nanjing 210096, China
Abstract  We study theoretically the interfacial electronic property of a heterojunction made from two Mott insulators (MI) with different magnetic structures. By means of unrestricted Hartree-Fock calculations in real space, we find that a charge dipole can form spontaneously near the interface of the MI/MI heterojunction. The magnitude of this charge dipole depends strongly on the magnetic states of both sides of the heterojunction. Combining with the result from an exactly solvable two-site toy model, we argue that the interface dipole arises from exchange effects as well as its asymmetry intrinsic to the heterojunction near the interface. Our study may shed light on the fabrication of ultrathin ferroelectric and magnetoelectric devices.
Keywords:  Mott insulator heterojunction      interface dipole      asymmetric exchange  
Received:  16 June 2008      Revised:  25 June 2008      Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))  
  75.30.Et (Exchange and superexchange interactions)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 10574021, 90403011, and 10704016).

Cite this article: 

Hao Lei (郝 雷), Wang Jun(汪 军) Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction 2008 Chin. Phys. B 17 4305

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