Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction
Hao Lei (郝雷)a, Wang Jun(汪军)b
aNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China; bDepartment of Physics, Southeast University, Nanjing 210096, China
Abstract We study theoretically the interfacial electronic property of a heterojunction made from two Mott insulators (MI) with different magnetic structures. By means of unrestricted Hartree-Fock calculations in real space, we find that a charge dipole can form spontaneously near the interface of the MI/MI heterojunction. The magnitude of this charge dipole depends strongly on the magnetic states of both sides of the heterojunction. Combining with the result from an exactly solvable two-site toy model, we argue that the interface dipole arises from exchange effects as well as its asymmetry intrinsic to the heterojunction near the interface. Our study may shed light on the fabrication of ultrathin ferroelectric and magnetoelectric devices.
Received: 16 June 2008
Revised: 25 June 2008
Accepted manuscript online:
PACS:
73.20.At
(Surface states, band structure, electron density of states)
(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
Fund: Project
supported by the National Natural Science Foundation of China (Grant
Nos 10574021, 90403011, and 10704016).
Cite this article:
Hao Lei (郝 雷), Wang Jun(汪 军) Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction 2008 Chin. Phys. B 17 4305
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