Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

doi:10.1088/1674-1056/22/1/016803

Abstract A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Keywords: layer transfer silicon thin film heterojunction solar cell hot-wire chemical vapor deposition doping concentration

Received: 15 May 2012
Revised: 11 June 2012
Accepted manuscript online:

PACS:	68.55.aj	(Insulators)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	88.40.jj	(Silicon solar cells)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219), the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11_0206), and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Corresponding Authors: Shen Hong-Lie
E-mail: hlshen@nuaa.edu.cn

Cite this article:

Zhang Lei (张磊), Shen Hong-Lie (沈鸿烈), Yue Zhi-Hao (岳之浩), Jiang Feng (江丰), Wu Tian-Ru (吴天如), Pan Yuan-Yuan (潘园园) Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell 2013 Chin. Phys. B 22 016803

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