Effect of bias condition on heavy ion radiation in bipolar junction transistor

doi:10.1088/1674-1056/21/8/080703

Abstract The characteristic degradations in silicon NPN bipolar junction transistor (BJT) of 3DG142 type are examined under the irradiation with 40-MeV chlorine (Cl) ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, larger variation of base current (I_B) is observed after irradiation at a given value of base-emitter voltage (V_BE), while the collector current is slightly affected by irradiation at a given V_BE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

Keywords: radiation effects ionization damage displacement damage transistors

Received: 04 December 2011
Revised: 17 December 2011
Accepted manuscript online:

PACS:

07.89.+b

(Environmental effects on instruments (e.g., radiation and pollution effects))

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. HIT.KLOF.2010003) and the National Basis Research Foundation of China (Grant No. 51320).

Corresponding Authors: Li Xing-Ji
E-mail: lxj0218@hit.edu.cn

Cite this article:

Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ) Effect of bias condition on heavy ion radiation in bipolar junction transistor 2012 Chin. Phys. B 21 080703

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Effect of bias condition on heavy ion radiation in bipolar junction transistor

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