Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

doi:10.1088/1674-1056/20/5/058503

Abstract An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate–collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

Keywords: collector resistance substrate bias effect SiGe heterojunction bipolar transistor thin film silicon-on-insulator

Received: 29 October 2010
Revised: 11 January 2011
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

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Xu Xiao-Bo(徐小波), Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), and Qu Jiang-Tao(屈江涛) Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator 2011 Chin. Phys. B 20 058503

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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

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