| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC |
| Zewei Shao(邵泽伟)1,2,†, Hongyi Xu(徐弘毅)1,2,†, Hengyu Wang(王珩宇)1,‡, Na Ren(任娜)1,2, and Kuang Sheng(盛况)1 |
1. College of Electrical Engineering, Zhejiang University, Hangzhou 310063, China;
2. Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311215, China |
|
|
|
|
Abstract High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability. Besides, under identical conditions of gate oxide thickness and gate voltage, the high-k dielectric enables a greater charge accumulation in the channel region, resulting in a larger number of free electrons available for conduction. However, the lower energy band gap of high-k materials leads to significant leakage currents at the interface with SiC, which greatly affects device reliability. By inserting a layer of SiO2 between the high-k material and SiC, the interfacial barrier can be effectively widened and hence the leakage current will be reduced. In this study, the optimal thickness of the intercalated SiO2 was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al2O3 layer and thermally nitride SiO2. Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al2O3 stacked on 1 nm, 2 nm, 3 nm, 6 nm, or 9 nm thick nitride SiO2. Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field. Finally, a saturation thickness of stacked SiO2 that contributed to dielectric breakdown and interfacial band offsets was identified. The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.
|
Received: 25 February 2023
Revised: 11 May 2023
Accepted manuscript online:
|
|
PACS:
|
71.55.Gs
|
(II-VI semiconductors)
|
| |
77.55.D-
|
|
| |
68.55.jd
|
(Thickness)
|
| |
77.22.Jp
|
(Dielectric breakdown and space-charge effects)
|
|
| Fund: Project supported by the Key Area Research and Development Program of Guangdong Province of China (Grant No.2021B0101300005) and the National Key Research and Development Program of China (Grant No.2021YFB3401603). |
Cite this article:
Zewei Shao(邵泽伟), Hongyi Xu(徐弘毅), Hengyu Wang(王珩宇), Na Ren(任娜), and Kuang Sheng(盛况) Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC 2023 Chin. Phys. B 32 087106
|
[1] Karki U, Gonzalez-Santini N S and Peng F Z 2020 IEEE Trans. Electron Devices 67 2544
[2] She X, Huang A Q, Lucia O and Ozpineci B 2017 IEEE Trans. Ind. Electron. 64 8193
[3] Liu J Q, Chung H J, Kuhr T, Li Q and Skowronski M 2002 Appl. Phys. Lett. 80 2111
[4] Spitz J, Melloch M R, Cooper J A and Capano M A 1998 IEEE Electron Device Lett. 19 100
[5] Ohshima T, Itoh H and Yoshikawa M 2001 J. Appl. Phys. 90 3038
[6] Naghibi J, Mohsenzade S, Mehran K and Foster M P 2022 IEEE Trans. Power Electron. 38 1079
[7] Runnion E, Gladstone S, Scott R, Dumin D, Lie L and Mitros J 1997 IEEE Trans. Electron Devices 44 993
[8] Dumin D J, Cooper J, Maddux J, Scott R and Wong D P 1994 J. Appl. Phys. 76 319
[9] Klein N and Gafni H 1966 IEEE Trans. Electron Devices ED-13 281
[10] Komiya K and Omura Y 2002 J. Appl. Phys. 92 2593
[11] Zhang Z, Wang Z, Guo Y and Robertson J 2021 Appl. Phys. Lett. 118 031601
[12] Siddiqui A, Khosa R Y and Usman M 2021 J. Mater. Chem. C 9 5055
[13] Yuan J, Yao S, Li W, Sylvestre A and Bai J 2017 J. Phys. Chem. C 121 12063
[14] Usman M, Arshad M, Suvanam S S and Hallén A 2018 J. Phys. D: Appl. Phys. 51 105111
[15] Usman M, Suvanam S S, Linnarsson M and Hallén A 2018 Mater. Sci. Semicond. Process. 81 118
[16] Jayawardhena I, Ramamurthy R, Morisette D, Ahyi A, Thorpe R, Kuroda M, Feldman L and Dhar S 2021 J. Appl. Phys. 129 075702
[17] Cheong K Y, Moon J H, Kim H J, Bahng W and Kim N K 2008 J. Appl. Phys. 103 084113
[18] Khosa R Y, Thorsteinsson E, Winters M, Rorsman N, Karhu R, Hassan J and Sveinbjörnsson E 2018 AIP Adv. 8 025304
[19] Lall P 1996 IEEE Trans. Reliab. 45 3
[20] Wolborski M, Bakowski M, Ortiz A, Pore V, Schöner A, Ritala M, Leskelä M and Hallén A 2006 Microelectron. Reliab. 46 743
[21] Kern W 1970 RCA Rev. 31 187
[22] Du M, Sun Y, Liu B, Chen B, Liao K, Ran R, Cai R, Zhou W and Shao Z 2021 Adv. Funct. Mater. 31 2101556
[23] Tanner C M, Perng Y C, Frewin C, Saddow S E and Chang J P 2007 Appl. Phys. Lett. 91 203510
[24] Agarwal A K, Seshadri S and Rowland L B 1997 IEEE Electron Device Lett. 18 592 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
