Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

doi:10.1088/1674-1056/24/4/044209

Abstract

Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n⁺-AZO subcontact layer is 14.7% lower than that of PCSS without an n⁺-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

Keywords: photoconductive semiconductor switch SiC n⁺-AZO subcontact layer on-state resistance

Received: 21 August 2014
Revised: 04 October 2014
Accepted manuscript online:

PACS:	42.79.Ta	(Optical computers, logic elements, interconnects, switches; neural networks)
	42.70.-a	(Optical materials)
	42.79.-e	(Optical elements, devices, and systems)

Fund:

Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Corresponding Authors: Liu Xue-Chao
E-mail: xcliu@mail.sic.ac.cn

Cite this article:

Zhou Tian-Yu (周天宇), Liu Xue-Chao (刘学超), Huang Wei (黄维), Dai Chong-Chong (代冲冲), Zheng Yan-Qing (郑燕青), Shi Er-Wei (施尔畏) Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches 2015 Chin. Phys. B 24 044209

[1]	Hashimshony D, Cohen C, Zigler A and Papadopoulos K 1996 Opt. Commun. 124 443
[2]	Yuan H, Tang X Y, Zhang Y M, Zhang Y M, Song Q W, Yang F and Wu H 2014 Chin. Phys. B 23 057102
[3]	Zheng L, Zhang F, Liu S B, Dong L, Liu X F, Fan Z C, Liu B, Yan G G, Wang L, Zhao W S, Sun G S, He Z and Yang F H 2013 Chin. Phys. B 22 097302
[4]	Caporaso G J, Sampayan S, Chen Y J, Blackfield D, Harris J, Hawkins S, Holmes C, Krogh M, Nelson S, Nunnally W, Paul A, Poole B, Rhodes M, Sanders D, Selenes K, Sullivan J, Wang L and Watson J 2007 Proceedings of IEEE Particle Accelerator Conference, June 25-29, 2007, Albuquerque, NM, USA, pp. 857-861
[5]	Senitzky B 1987 J. Appl. Phys. 62 4798
[6]	Kim A, Zeto R, Youmans R, Kondek C and Weiner M 1991 Proceedings of Conference on Optically Activated Switching, November 5-6, 1990, Boston, MA, USA, pp. 173-178
[7]	Loubriel G M, Zutavern F J, Baca A G, Hjalmarson P P, Plut T A, Helgeson W D, OMalley M W, Ruebush M H and Brown D J 1997 IEEE Trans. Plasma Sci. 25 124
[8]	Bickermann M, Epelbaum B M, Hofmann D, Straubinger T L, Weingartner R and Winnacker A 2001 J. Cryst. Growth 233 211
[9]	Augustine G, Hobgood H M, Balakrishna V, Dunne G and Hopkins R H 1997 Phys. Status Solidi B 202 137
[10]	Bickermann M, Hofmann D, Straubinger T L, Weingartner R and Winnacker A 2002 Mater. Sci. Forum 433-436 51
[11]	Kelkar K S, Islam N E, Fessler C M and Nunnally W C 2005 J. Appl. Phys. 98 093102
[12]	Sudarshan T S, Gradinaru G, Korony G, Mitchel W and Hopkins R H 1995 Appl. Phys. Lett. 67 3435
[13]	Zhu K, Johnstone D, Leach J, Fu Y, Morkoc H, Li G and Ganguly B 2007 Superlattices Microstruct. 41 264
[14]	Frenzel H, Lajn A, von Wenckstern H, Lorenz M, Schein F, Zhang Z P and Grundmann M 2010 Adv. Mater. 22 5332
[15]	Cao M M, Zhao X R, Duan L B, Liu J R, Guan M M and Guo W R 2014 Chin. Phys. B 23 047805
[16]	Jang Y R, Yoo K H and Park S M 2010 J. Mater. Sci. Technol. 26 973
[17]	Zhu K, Dogan S, Moon Y T, Leach J, Yun F, Johnstone D, Morkoc H, Li G and Ganguly B 2005 Appl. Phys. Lett. 86 261108
[18]	Weeks T W, Bremser M D, Ailey K S, Carlson E, Perry W G, Piner E L, ElMasry N A and Davis R F 1996 J. Mater. Res. 11 1011
[19]	Bauer A, Krausslich J, Dressler L, Kuschnerus P, Wolf J, Goetz K, Kackell P, Furthmuller J and Bechstedt F 1998 Phys. Rev. B 57 2647
[20]	Wu J Q 2009 J. Appl. Phys. 106 011101
[21]	Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J. Vac. Sci. Technol. B 22 932
[22]	Sullivan J S and Stanley J R 2006 Proceedings of the 27th International Power Modulator Symposium and 2006 High Voltage Workshops, May 14-18, Washington DC, USA, pp. 215-218
[23]	Hettler C, James C and Dickens J 2009 Proceedings of the 17th IEEE International Pulsed Power Conference, June 28-July 2, 2009, Washington DC, USA, pp. 628-631
[24]	James C, Hettler C and Dickens J 2011 IEEE Trans. Electron Dev. 58 508
[25]	Wang L N, Xun T, Yang H W, Liu J L and Zhang Y 2014 Rev. Sci. Instrum. 85 044703

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Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

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