Research on the optimum hydrogenated silicon thin films for application in solar cells
Lei Qing-Song(雷青松)a)† , Wu Zhi-Meng(吴志猛)a), Geng Xin-Hua(耿新华)b), Zhao Ying(赵颖)b), Sun Jian(孙健)b), and Xi Jian-Ping(奚建平)a)
a Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Photo-electronics, Nankai University, Tianjin 300071, China
Abstract Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170℃. The electrical, structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current--voltage (I-V) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.
Received: 31 October 2005
Revised: 20 January 2006
Accepted manuscript online:
Fund: Project
supported by the State Key Program of Basic Research of China (Grant
Nos~G2000028202 and G2000028203).
Cite this article:
Lei Qing-Song(雷青松), Wu Zhi-Meng(吴志猛), Geng Xin-Hua(耿新华), Zhao Ying(赵颖), Sun Jian(孙健), and Xi Jian-Ping(奚建平) Research on the optimum hydrogenated silicon thin films for application in solar cells 2006 Chinese Physics 15 3033
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