Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

doi:10.1088/1674-1056/24/6/064211

Abstract Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

Keywords: internal loss free carrier absorption semiconductor laser

Received: 10 November 2014
Revised: 11 December 2014
Accepted manuscript online:

PACS:	42.81.Dp	(Propagation, scattering, and losses; solitons)
	42.25.Bs	(Wave propagation, transmission and absorption)
	42.55.Px	(Semiconductor lasers; laser diodes)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274046, 61335009, 61201103, and 61320106013) and the National High Technology Research and Development Program of China (Grant No. 2013AA014202).

Corresponding Authors: Tan Shao-Yang
E-mail: tanshy10@semi.ac.cn

About author: 42.81.Dp; 42.25.Bs; 42.55.Px

Cite this article:

Tan Shao-Yang (谭少阳), Zhai Teng (翟腾), Zhang Rui-Kang (张瑞康), Lu Dan (陆丹), Wang Wei (王圩), Ji Chen (吉晨) Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers 2015 Chin. Phys. B 24 064211

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Graded doping low internal loss 1060-nm InGaAs/AlGaAsquantum well semiconductor lasers

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