Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells
Lin Gui-Jiang(林桂江)a)†, Lai Hong-Kai(赖虹凯)a), Li Cheng(李成)a), Chen Song-Yan(陈松岩)a), and Yu Jin-Zhong(余金中)a)b)
a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China; b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract The hole subband structures and effective masses of tensile strained Si/Si$_{1 - y }$Ge$_{y}$ quantum wells are calculated by using the 6$\times $6 k $\cdot$ p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si$_{0.55}$Ge$_{0.45}$ quantum well grown on a relaxed Si$_{0.5}$Ge$_{0.5}$ (100) substrates shows a large absorption coefficient of 8400 cm$^{ - 1}$.
Received: 15 December 2007
Revised: 29 December 2007
Accepted manuscript online:
Fund: Project supported by National
Natural Science Foundation of China (Grant Nos 50672079, 60336010
and 60676027) and National Basic
Research Program of China (Grant No 2007CB613400).
Cite this article:
Lin Gui-Jiang(林桂江), Lai Hong-Kai(赖虹凯), Li Cheng(李成), Chen Song-Yan(陈松岩), and Yu Jin-Zhong(余金中) Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells 2008 Chin. Phys. B 17 3479
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