Electron self-energy and effective mass in a single heterostructure
Hua Xiu-Kun (花修坤)a, Wu Yin-Zhong (吴银忠)ab, Li Zhen-Ya (李振亚)ac
a Department of Physics, Suzhou University, Suzhou 215006, China; b Department of Physics, Changshu College, Changshu 215006, China; c Center of Chinese Advanced Science and Technology (World Laboratory), PO Box 8730, Beijing 100080, China
Abstract In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Green-function method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.
Received: 10 February 2003
Revised: 07 April 2003
Accepted manuscript online:
PACS:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
(Fermi surface: calculations and measurements; effective mass, g factor)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10174049).
Cite this article:
Hua Xiu-Kun (花修坤), Wu Yin-Zhong (吴银忠), Li Zhen-Ya (李振亚) Electron self-energy and effective mass in a single heterostructure 2003 Chinese Physics 12 1296
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