PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING
Liu Ji-wen (刘技文)ab, Xie Fang-qing (谢仿卿)a, Zhong Ding-yong (钟定永)a, Wang En-ge (王恩哥)a, Liu Wen-xi (刘文西)b, Li Shun-feng (李顺峰)c, Yang Hui (杨辉)c
a State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China; c National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract Amorphous SiC films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200℃ for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous SiC is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the SiC nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline SiC films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.
Received: 01 January 2001
Revised: 24 April 2001
Accepted manuscript online:
PACS:
7855
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10074049, 19974071, 69736020) and by the Natural Sciences Foundation of Tianjin, China.
Cite this article:
Liu Ji-wen (刘技文), Xie Fang-qing (谢仿卿), Zhong Ding-yong (钟定永), Wang En-ge (王恩哥), Liu Wen-xi (刘文西), Li Shun-feng (李顺峰), Yang Hui (杨辉) PHOTOLUMINESCENCE OF NANOCRYSTALLINE SiC FILMS PREPARED BY RF MAGNETRON SPUTTERING 2001 Chinese Physics 10 36
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