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Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices |
| Guangbao Lu(陆广宝)1,2,†, Jun Liu(刘俊)1,2,†, Chuanguo Zhang(张传国)1, Yang Gao(高扬)1,2, and Yonggang Li(李永钢)1,2,‡ |
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China |
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Abstract The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2 interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.
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Received: 26 August 2022
Revised: 31 October 2022
Accepted manuscript online: 03 November 2022
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PACS:
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85.30.-z
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(Semiconductor devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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24.10.-i
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(Nuclear reaction models and methods)
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42.88.+h
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(Environmental and radiation effects on optical elements, devices, and systems)
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| Fund: Project supported by the Science Challenge Project of China (Grant No. TZ2018004), the National Natural Science Foundation of China (Grant Nos. 11975018 and 11775254), the National MCF Energy R&D Program of China (Grant No. 2018YEF0308100), and the outstanding member of Youth Innovation Promotion Association CAS (Grant No. Y202087). |
Corresponding Authors:
Yonggang Li
E-mail: ygli@theory.issp.ac.cn
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Cite this article:
Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢) Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices 2023 Chin. Phys. B 32 018506
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[1] Benton E R and Benton E V 2001 Nucl. Instr. Meth. B 184 255
[2] Sajid M, Chechenin N G, Sill Torres F, Nabeel Hanif M, Gulzari U A, Arslan S and Khan E U 2018 Nucl. Instr. Meth. B 428 30
[3] Foster C C 2003 MRS Bull. 28 136
[4] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1833
[5] Dodd P E 2005 IEEE Trans. Device Mater. Rel. 5 343
[6] Adell P C and Scheick L Z 2013 IEEE Trans. Nucl. Sci. 60 1929
[7] Hughes H L and Benedetto J M 2003 IEEE Trans. Nucl. Sci. 50 500
[8] Choi Y, Ha D, King T and Hu C 2001 IEEE DRC 85-86
[9] Chen Y, Xu D, Xu K, Zhang N, Liu S, Zhao J, Luo Q, Snyman L W and Swart J W 2019 Chin. Phys. B 28 107801
[10] Oldham T R and McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[11] Ma T C and Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Devices and Circuits (New York: Wiley)
[12] Hughes H L and Giroux R R 1964 Electronics 37 58
[13] Hughes H L 1965 IEEE Trans. Nucl. Sci. 12 53
[14] Kooi E 1965 Philips Res. Rept. 20 306
[15] Zaininger K H 1966 Appl. Phys. Lett. 8 140
[16] Szedon J R and Sandor J E 1965 Appl. Phys. Lett. 6 181
[17] Barnaby H J, McLain M L, Esqueda I S and Xiao Jie C 2009 IEEE Trans. Circuits Syst. I, Reg. Papers 56 1870
[18] Xu J, Ma Z, Li H, Song Y, Zhang L and Lu B 2018 IEEE Trans. Semiconduct. Manufact. 31 183
[19] Song Y, Zhang G, Cai X, Dou B, Wang Z, Liu Y, Zhou H, Zhong L, Dai G, Zuo X and Wei S H 2022 Small 18 e2107516
[20] Chen X J, Barnaby H J, Vermeire B, Holbert K, Wright D, Pease R L, Dunham G, Platteter D G, Seiler J, McClure S and Adell P 2007 IEEE Trans. Nucl. Sci. 54 1913
[21] Chatzikyriakou E, Potter K, Redman-White W and De Groot C H 2017 Nucl. Instr. Meth. B 393 39
[22] Pease R L, Adell P C, Rax B G, Chen X J, Barnaby H J, Holbert K E and Hjalmarson H P 2008 IEEE Trans. Nucl. Sci. 55 3169
[23] Pershenkov V, Bakerenkov A, Rodin A, Felitsyn V, Zhukov A, Telets V and Belyakov V 2020 Facta universitatis-series: Electronics and Energetics 33 303
[24] Srour J R and Mcgarrity J M 1988 Proc. IEEE 76 1443
[25] Esqueda I S, Barnaby H J, Adell P C, Rax B G, Hjalmarson H P, McLain M L and Pease R L 2011 IEEE Trans. Nucl. Sci. 58 2945
[26] Lu Z Y, Nicklaw C J, Fleetwood D M, Schrimpf R D and Pantelides S T 2002 Phys. Rev. Lett. 89 285505
[27] Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R and Pantelides S T 2011 IEEE Trans. Nucl. Sci. 59 51
[28] Blöchl P E 2000 Phys. Rev. B 62 6158
[29] Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R and Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937
[30] Devine R A B, Mathiot D, Warren W L, Fleetwood D M and Aspar B 1993 Appl. Phys. Lett. 63 2926
[31] Rashkeev S N, Fleetwood D M, Schrimpf R D and Pantelides S T 2001 Phys. Rev. Lett. 87 165506
[32] Huang Q and Jiang J 2019 Prog. Nucl. Energy 114 105
[33] Tuttle B R and Pantelides S T 2009 Phys. Rev. B 79 115206
[34] Chen X J, Barnaby H J, Adell P, Pease R L, Vermeire B and Holbert K E 2009 IEEE Trans. Nucl. Sci. 56 3196
[35] Jafari H, Feghhi S A H and Boorboor S 2015 Radiat. Meas. 73 69
[36] Xu K K 2021 J. Micromech. Microeng. 31 054001
[37] Sills R B and Cai W 2014 Model. Simul. Mater. Sci. Eng. 22 025003
[38] Winokur P S and Boesch H E 1980 IEEE Trans. Nucl. Sci. 27 1647 |
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