Aging mechanism of GaN-based yellow LEDs with V-pits

doi:10.1088/1674-1056/28/6/067305

Abstract

GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm² for 500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm². Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons:one is the increase of Shockley-Rrad-Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

Keywords: GaN-based yellow LED aging mechanisms V-pits

Received: 13 March 2019
Revised: 02 April 2019
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	78.60.Fi	(Electroluminescence)
	73.21.Fg	(Quantum wells)
	73.21.Cd	(Superlattices)

Fund:

Project supported by the National Natural Science Foundation for Young Scientists of China (Grant Nos. 61704069 and 51602141) and the National Key Research and Development Program of China (Grant No. 2016YFB0400601).

Corresponding Authors: Fang Fang
E-mail: 41770109@qq.com

Cite this article:

Tian-Ran Zhang(张天然), Fang Fang(方芳), Xiao-Lan Wang(王小兰), Jian-Li Zhang(张建立), Xiao-Ming Wu(吴小明), Shuan Pan(潘栓), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益) Aging mechanism of GaN-based yellow LEDs with V-pits 2019 Chin. Phys. B 28 067305

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Aging mechanism of GaN-based yellow LEDs with V-pits

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