Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

doi:10.1088/1674-1056/26/1/016601

Abstract

Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9 cm²/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

Keywords: metal-induced crystallization poly-Si nickel diffusion coefficient

Received: 29 August 2016
Revised: 25 October 2016
Accepted manuscript online:

PACS:	66.30.Dn	(Theory of diffusion and ionic conduction in solids)
	81.05.Gc	(Amorphous semiconductors)
	68.35.bg	(Semiconductors)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61301077 and 61574096), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130319), and the Science and Technology Program of Suzhou City, China (Grant No. SYG201538).

Corresponding Authors: Mingxiang Wang
E-mail: mingxiang_wang@suda.edu.cn

Cite this article:

Dongli Zhang(张冬利), Mingxiang Wang(王明湘), Man Wong(王文), Hoi-Sing Kwok(郭海成) Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel 2017 Chin. Phys. B 26 016601

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Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

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