Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

doi:10.1088/1674-1056/24/8/084211

Abstract The effects of optical field on the phenomenon of optical bistability (OB) are investigated in a K-type semiconductor double quantum well (SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.

Keywords: optical bistability semiconductor double quantum wells K-type Y-type and inverted Y-type schemes OB threshold intensity

Received: 06 February 2015
Revised: 27 March 2015
Accepted manuscript online:

PACS:	42.65.Pc	(Optical bistability, multistability, and switching, including local field effects)
	42.65.Sf	(Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics)
	42.68.Ay	(Propagation, transmission, attenuation, and radiative transfer)

Fund: Project supported by the Lithuanian Research Council (Grant No. VP1-3.1-ŠM-01-V-03-001).

Corresponding Authors: Hamedi H R
E-mail: Hamid.r.Hamedi@gmail.com

Cite this article:

Hamedi H R, Mehmannavaz M R, Afshari Hadi Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells 2015 Chin. Phys. B 24 084211

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Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

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