Energy distribution extraction of negative charges responsible for positive bias temperature instability

doi:10.1088/1674-1056/24/7/077304

Abstract

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of nMOSFET during positive bias temperature instability (PBTI) stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy, and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.

Keywords: positive bias temperature instability high-k/metal gate electron trapping energy distribution

Received: 09 December 2014
Revised: 17 March 2015
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	77.55.D-
	85.30.Tv	(Field effect devices)

Fund:

Project supported by the National Science & Technology Major Projects of the Ministry of Science and Technology of China (Grant No. 2009ZX02035) and the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129).

Corresponding Authors: Ren Shang-Qing, Wang Wen-Wu
E-mail: renshangqing@ime.ac.cn;wangwenwu@ime.ac.cn

Cite this article:

Ren Shang-Qing (任尚清), Yang Hong (杨红), Wang Wen-Wu (王文武), Tang Bo (唐波), Tang Zhao-Yun (唐兆云), Wang Xiao-Lei (王晓磊), Xu Hao (徐昊), Luo Wei-Chun (罗维春), Zhao Chao (赵超), Yan Jiang (闫江), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春) Energy distribution extraction of negative charges responsible for positive bias temperature instability 2015 Chin. Phys. B 24 077304

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