Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

doi:10.1088/1674-1056/24/6/067203

Abstract

The effect of de-trapping on the carrier transport process in the CdZnTe detector is studied by laser beam-induced transient current (LBIC) measurement. Trapping time, de-trapping time, and mobility for electrons are determined directly from transient waveforms under various bias voltages. The results suggest that an electric field strengthens the capture and emission effects in trap center, which is associated with field-assisted capture and the Poole–Frenkel effect, respectively. The electron mobility is calculated to be 950 cm²/V·s and the corresponding electron mobility-lifetime product is found to be 1.32× 10^-3 cm²/V by a modified Hecht equation with considering the surface recombination effect. It is concluded that the trapping time and de-trapping time obtained from LBIC measurement provide direct information concerning the transport process.

Keywords: CdZnTe LBIC de-trapping electron transport process mobility

Received: 17 September 2014
Revised: 05 January 2015
Accepted manuscript online:

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
	73.61.Ga	(II-VI semiconductors)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)

Fund:

Project supported by the National Instrumentation Program, China (Grant No. 2011YQ040082), the National Natural Science Foundation of China (Grant Nos. 61274081, 51372205, and 51202197), the National 973 Project of China (Grant No. 2011CB610400), the China Postdoctoral Science Foundation (Grant No. 2014M550509), and the 111 Project of China (Grant No. B08040).

Corresponding Authors: Jie Wan-Qi
E-mail: jwq@nwpu.edu.cn

About author: 72.80.Ey; 73.50.Gr; 73.61.Ga; 72.20.Jv

Cite this article:

Guo Rong-Rong (郭榕榕), Jie Wan-Qi (介万奇), Zha Gang-Qiang (查钢强), Xu Ya-Dong (徐亚东), Feng Tao (冯涛), Wang Tao (王涛), Du Zhuo-Tong (杜卓同) Effect of de-trapping on carrier transport process in semi-insulating CdZnTe 2015 Chin. Phys. B 24 067203

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Effect of de-trapping on carrier transport process in semi-insulating CdZnTe

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