Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses

doi:10.1088/1674-1056/24/12/126701

Abstract A HfO₂/n-InAlAs MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in InAs/AlSb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of HfO₂/n-InAlAs MOS-capacitor samples with different HfO₂ thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε _ox of HfO₂ layer is enhanced and the InAlAs-HfO₂ interface trap density D_it is reduced, leading to an effective reduction of the leakage current. It is found that the HfO₂ thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO₂/n-InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.

Keywords: HfO₂/n-InAlAs MOS-capacitor high-k gate dielectric interface trap density leakage current

Received: 08 June 2015
Revised: 30 July 2015
Accepted manuscript online:

PACS:	67.30.hp	(Interfaces)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	61.72.uj	(III-V and II-VI semiconductors)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327505) and the Advance Research Foundation of China (Grant No. 914xxx803-051xxx111).

Corresponding Authors: Guo Hui
E-mail: Guohui@mail.xidian.edu.cn

Cite this article:

Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses 2015 Chin. Phys. B 24 126701

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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses

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Interfacial and electrical characteristics of a HfO₂/n-InAlAs MOS-capacitor with different dielectric thicknesses