Structural properties of a-SiOx：H films studied by an improved infrared-transmission analysis method

doi:10.1088/1674-1056/23/9/098801

Abstract An improved method of fitting point-by-point is proposed to determine the absorption coefficient from infrared (IR) transmittance. With no necessity of empirical correction factors, the absorption coefficient can be accurately determined for the films with thin thicknesses. Based on this method, the structural properties of the hydrogenated amorphous silicon oxide materials (a-SiO_x:H) are investigated. The oxygen-concentration-dependent variation of the Si-O-Si and the Si-H related modes in a-SiO_x:H materials is discussed in detail.

Keywords: amorphous silicon oxide film thin thickness infrared transmission structural properties

Received: 05 February 2014
Revised: 18 April 2014
Accepted manuscript online:

PACS:	88.40.H-	(Solar cells (photovoltaics))
	78.30.-j	(Infrared and Raman spectra)
	78.20.Bh	(Theory, models, and numerical simulation)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), the National Natural Science Foundation of China (Grant No. 60976051), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0295).

Corresponding Authors: Zhao Ying
E-mail: zhaoygds@nankai.edu.cn

Cite this article:

Wang Shuo (王烁), Zhang Xiao-Dan (张晓丹), Xiong Shao-Zhen (熊绍珍), Zhao Ying (赵颖) Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method 2014 Chin. Phys. B 23 098801

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Structural properties of a-SiOx：H films studied by an improved infrared-transmission analysis method

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Structural properties of a-SiO_x：H films studied by an improved infrared-transmission analysis method