In-situ multi-information measurement system for preparing gallium nitride photocathode

doi:10.1088/1674-1056/21/3/030601

Abstract We introduce the first domestic in-situ multi-information measurement system for a gallium nitride (GaN) photocathode. This system can successfully fulfill heat cleaning and activation for GaN in an ultrahigh vacuum environment and produce a GaN photocathode with a negative electron affinity (NEA) status. Information including the heat cleaning temperature, vacuum degree, photocurrent, electric current of cesium source, oxygen source, and the most important information about the spectral response, or equivalently, the quantum efficiency (QE) can be obtained during preparation. The preparation of a GaN photocathode with this system indicates that the optimal heating temperature in a vacuum is about 700 ℃. We also develop a method of quickly evaluating the atomically clean surface with the vacuum degree versus wavelength curve to prevent possible secondary contamination when the atomic level cleaning surface is tested with X-ray photoelectron spectroscopy. The photocurrent shows a quick enhancement when the current ratio between the cesium source and oxygen source is 1.025. The spectral response of the GaN photocathode is flat in a wavelength range from 240 nm to 365 nm, and an abrupt decline is observed at 365 nm, which demonstrates that with the it in-situ multi-information measurement system the NEA GaN photocathode can be successfully prepared.

Keywords: gallium nitride photocathode in-situ multi-information measurement

Received: 17 May 2011
Revised: 26 August 2011
Accepted manuscript online:

PACS:	06.30.-k	(Measurements common to several branches of physics and astronomy)
	07.30.Kf	(Vacuum chambers, auxiliary apparatus, and materials)
	71.55.Eq	(III-V semiconductors)
	79.60.-i	(Photoemission and photoelectron spectra)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60871012) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2011FQ027).

Corresponding Authors: Chang Ben-Kang,bkchang@mail.njust.edu.cn
E-mail: bkchang@mail.njust.edu.cn

Cite this article:

Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Qian Yun-Sheng(钱芸生), and Zhang Jun-Ju(张俊举) In-situ multi-information measurement system for preparing gallium nitride photocathode 2012 Chin. Phys. B 21 030601

[1]	Ulmer M P, Wessels B W, Han B, Gregie J, Tremsin A and Siegmund O H W 2003 Proc. SPIE 5164 144
[2]	Siegmund O, Tremsin A, Vallerga J, McPhatea J, Hull J, Malloy J and Dabiran A 2008 Proc. SPIE 7021 70211B
[3]	Uchiiyama S, Takagi Y, Niigaki M and Kan H 2005 Appl. Phys. Lett. 86 103511
[4]	Leopold D J, Buckley J H and Rebillot P 2005 J. Appl. Phys. 98 043525
[5]	Machuca F, SunY, Liu Z, Ioakeimidi K, Pianetta P and Pease R F W 2000 J. Vac. Sci. Technol. B 18 3042
[6]	Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M and Tachino M 2008 Proc. SPIE 6945 69451N-1
[7]	Fu X Q, Chang B K, Wang X H, Li B and Qiao J L 2010 Acta Phys. Sin. 59 704 (in Chinese)
[8]	Fu X Q, Chang B K, Wang X H, Li B, Du Y J and Zhang J J 2011 Chin. Phys. B 20 037902
[9]	Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Guo X Y and Du X Q 2011 Acta Phys. Sin. 60 047901 (in Chinese)
[10]	Chang B K, Fang H B, Fu R G and Qian Y S 1998 Chinese Journal of Vacuum Science and Technology 18 111 (in Chinese)
[11]	Qian Y S, Zong Z Y and Chang B K 2000 Chinese Journal of Vacuum Science and Technology 20 305 (in Chinese)
[12]	Zou J J, Qian Y S, Chang B K, Wang H and Wang S Y 2006 Chin. J. Vac. Sci. Tech. 26 172 (in Chinese)
[13]	Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E and Pease R F W 2002 J. Vac. Sci. Technol. A 20 1784
[14]	Dialea M, Aureta F D, van der Berga N G, Odendaala R Q and Roosb W D 2005 Appl. Surf. Sci. 246 279

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In-situ multi-information measurement system for preparing gallium nitride photocathode

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