A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

doi:10.1088/1674-1056/21/1/017304

Abstract Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.

Keywords: gallium nitride metal-oxide-semiconductor field-effect transistor atomic-layer deposition aluminium oxide

Received: 27 June 2011
Revised: 19 July 2011
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.Ey	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

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Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) A study of GaN MOSFETs with atomic-layer-deposited Al₂O₃ as the gate dielectric 2012 Chin. Phys. B 21 017304

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A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

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A study of GaN MOSFETs with atomic-layer-deposited Al₂O₃ as the gate dielectric