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Chin. Phys. B, 2010, Vol. 19(11): 117308    DOI: 10.1088/1674-1056/19/11/117308

Study on the negative bias temperature instability effect under dynamic stress

Ma Xiao-Hua(马晓华)a)†, Cao Yan-Rong(曹艳荣) b), and Hao Yue(郝跃)c)
a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071, China; c Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract  This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.
Keywords:  negative bias temperature instability      dynamic stress      recovery  
Received:  27 October 2009      Revised:  05 June 2010      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Cite this article: 

Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), and Hao Yue(郝跃) Study on the negative bias temperature instability effect under dynamic stress 2010 Chin. Phys. B 19 117308

[1] Massey J G 2004 Reliability Workshop Final Report p199
[2] Li Z H, Liu H X and Hao Y 2006 Chin. Phys. 15 833
[3] Cao Y R, Ma X H, Hao Y and Hu S G 2010 Chin. Phys. B 19 047307-1
[4] Mahapatra S and Kumar P B 2004 IEEE Trans. Electron Devices 51 1371
[5] Cao Y R, Ma X H, Hao Y, Zhang Y, Yu L, Zhu Z W and Chen H F 2007 em Chin. Phys. 16 1140
[6] Li Z H, Liu H X and Hao Y 2006 Acta Phys. Sin. 55 820 (in Chinese)
[7] Cao Y R, Hao Y, Ma X H and Hu S G 2009 Chin. Phys. B 18 309
[8] Schroder D K 2003 J. Appl. Phys. 94 1
[9] Hao Y, Li Z H and Liu H X 2007 Chin. Phys. 16 1445
[10] Rangan S, Mielke N and Yeh E C 2003 IEEE IEDM p341
[11] Chen G, Li M F, Ang C H, Zheng J Z and Kwong D L 2002 IEEE Electron Dev. Lett. 23 734
[12] Ershov M, Saxena S, Karbasi H, Winters S, Minehane S, Babcock J, Lindley R, Clifton P, Redford M and Shibkov A 2003 Appl. Phys. Lett. 83 1647
[13] Chen G, Chuah K Y, Li M F, Chan D S, Ang C H, Zheng J Z, Jin Y and Kwong D L 2003 Int. Reliability Phys. Symposium p196
[14] Huard V and Denais M 2004 Int. Reliability Phys. Symposium p40 endfootnotesize
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