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Chin. Phys. B, 2009, Vol. 18(7): 3040-3043    DOI: 10.1088/1674-1056/18/7/071
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A fabrication and magnetic properties study on Al doped Zn0.99Co0.01O dilution ferromagnetic semiconductors

Yu Zhou(于宙), Li Xiang(李祥), Long Xue(龙雪), Cheng Xing-Wang(程兴旺), Liu Ying(刘颖), and Cao Chuan-Bao(曹传宝)
School for Materials Science & Engineering, Beijing Institute of Technology, Beijing 100872, China
Abstract  This paper reports that a chemical method is employed to synthesize Co and Al co-doped ZnO, namely, Zn0.99-xCo0.01AlxO dilution semiconductors with the nominal composition of x=0, 0.005 and 0.02. Structural, magnetic and optical properties of the produced samples are studied. The results indicate that samples sintered in air under the temperatures of 500 ℃ show a single wurtzite ZnO structure and the ferromagnetism decreases with the increase of Al. Photoluminescence spectra of different Al-doped samples indicate that increasing Al concentration in Zn0.99-xCo0.01AlxO results in a decrease of Zni, which resembles the trend of the ferromagnetic property of the corresponding samples. Therefore, it is deduced that the ferromagnetism observed in the studied samples originates from the interstitial defect of zinc (Zni) in the lattice of Co-doped ZnO.
Keywords:  ZnO      DMSs      doping  
Received:  27 October 2008      Revised:  30 December 2008      Accepted manuscript online: 
PACS:  81.05.Dz (II-VI semiconductors)  
  78.55.Et (II-VI semiconductors)  
  61.66.Fn (Inorganic compounds)  
  75.50.Dd (Nonmetallic ferromagnetic materials)  
  75.50.Pp (Magnetic semiconductors)  
  61.72.J- (Point defects and defect clusters)  

Cite this article: 

Yu Zhou(于宙), Li Xiang(李祥), Long Xue(龙雪), Cheng Xing-Wang(程兴旺), Liu Ying(刘颖), and Cao Chuan-Bao(曹传宝) A fabrication and magnetic properties study on Al doped Zn0.99Co0.01O dilution ferromagnetic semiconductors 2009 Chin. Phys. B 18 3040

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