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Chin. Phys., 2007, Vol. 16(4): 1140-1144    DOI: 10.1088/1009-1963/16/4/047
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Cao Yan-Rong, Ma Xiao-Hua, Hao Yue, Zhang Yue, Yu Lei, Zhu Zhi-Wei, Chen Hai-Feng
School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract  Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.
Keywords:  oxide positive charges      NBTI      recovery      interface states  
Received:  13 August 2006      Revised:  20 October 2006      Published:  20 April 2007
PACS:  85.30.Tv (Field effect devices)  
  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No~60376024) and the National High Technology Research and Development Program of China (Grant No~2003AA1Z1630).

Cite this article: 

Cao Yan-Rong, Ma Xiao-Hua, Hao Yue, Zhang Yue, Yu Lei, Zhu Zhi-Wei, Chen Hai-Feng Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs 2007 Chin. Phys. 16 1140

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