Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
Cao Yan-Rong, Ma Xiao-Hua, Hao Yue, Zhang Yue, Yu Lei, Zhu Zhi-Wei, Chen Hai-Feng
School of Microelectronics, Xidian University, Xi'an 710071,
China
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials
and Devices, Xi'an 710071, China
Abstract Taking the actual operating condition of complementary metal oxide
semiconductor (CMOS) circuit into account, conventional direct
current (DC) stress study on negative bias temperature instability
(NBTI) neglects the detrapping of oxide positive charges and the
recovery of interface states under the `low' state of p-channel metal
oxide semiconductor field effect transistors (MOSFETs) inverter
operation. In this paper we have studied the degradation and recovery
of NBTI under alternating stress, and presented a possible recovery
mechanism. The three stages of recovery mechanism under positive bias
are fast recovery, slow recovery and recovery saturation.
Received: 13 August 2006
Revised: 20 October 2006
Published: 20 April 2007
Fund: Project supported by the National Natural Science
Foundation of China (Grant No~60376024) and the National High Technology
Research and Development Program of China (Grant No~2003AA1Z1630).
Cite this article:
Cao Yan-Rong, Ma Xiao-Hua, Hao Yue, Zhang Yue, Yu Lei, Zhu Zhi-Wei, Chen Hai-Feng Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs 2007 Chin. Phys. 16 1140
