A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation
Ma Zhong-Fa (马仲发), Zhuang Yi-Qi (庄奕琪), Du Lei (杜磊), Wei Shan (魏珊)
Institute of Microelectronics Key Laboratory of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented,with which the dependence of $\tau_{\rm c}/\tau_{\rm e}$ (where $\tau_{\rm c}$=capture time, $\tau_{\rm e}$=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.
Received: 18 August 2004
Revised: 08 December 2004
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60276028), the National Defence Foundation (Grant No 51411040601DZ014) and the Key lab Foundation of National Defence Science $\&$ Technology (Grant No 51433030103DZ01)
Cite this article:
Ma Zhong-Fa (马仲发), Zhuang Yi-Qi (庄奕琪), Du Lei (杜磊), Wei Shan (魏珊) A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation 2005 Chinese Physics 14 808
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