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Other articles related with "tunnel field-effect transistor"：
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108506 |
Yunhe Guan(关云鹤), Huan Li(黎欢), Haifeng Chen(陈海峰), and Siwei Huang(黄思伟) |
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An accurate analytical surface potential model of heterojunction tunnel FET |
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Chin. Phys. B
2023 Vol.32 (10): 108506-108506
[Abstract]
(118)
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[PDF 1646 KB]
(52)
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78504 |
Jiale Sun(孙佳乐), Yuming Zhang(张玉明), Hongliang Lu(吕红亮), Zhijun Lyu(吕智军),Yi Zhu(朱翊), Yuche Pan(潘禹澈), and Bin Lu(芦宾) |
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High on-state current p-type tunnel effect transistor based on doping modulation |
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Chin. Phys. B
2023 Vol.32 (7): 78504-078504
[Abstract]
(205)
[HTML 0 KB]
[PDF 663 KB]
(74)
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78503 |
Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜) |
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Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance |
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Chin. Phys. B
2021 Vol.30 (7): 78503-078503
[Abstract]
(575)
[HTML 1 KB]
[PDF 601 KB]
(83)
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58501 |
Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐) |
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Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source |
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Chin. Phys. B
2020 Vol.29 (5): 58501-058501
[Abstract]
(655)
[HTML 1 KB]
[PDF 606 KB]
(118)
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108501 |
Hui-Fang Xu(许会芳), Jian Cui(崔健), Wen Sun(孙雯), Xin-Feng Han(韩新风) |
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Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance |
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Chin. Phys. B
2019 Vol.28 (10): 108501-108501
[Abstract]
(909)
[HTML 1 KB]
[PDF 564 KB]
(212)
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18505 |
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠) |
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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Chin. Phys. B
2019 Vol.28 (1): 18505-018505
[Abstract]
(915)
[HTML 1 KB]
[PDF 792 KB]
(175)
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78502 |
Cong Li(李聪), Zhi-Rui Yan(闫志蕊), Yi-Qi Zhuang(庄奕琪), Xiao-Long Zhao(赵小龙), Jia-Min Guo(郭嘉敏) |
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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric |
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Chin. Phys. B
2018 Vol.27 (7): 78502-078502
[Abstract]
(559)
[HTML 0 KB]
[PDF 1485 KB]
(242)
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18504 |
Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军) |
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Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction |
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Chin. Phys. B
2017 Vol.26 (1): 18504-018504
[Abstract]
(679)
[HTML 1 KB]
[PDF 329 KB]
(541)
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27701 |
Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪) |
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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27701-027701
[Abstract]
(855)
[HTML 1 KB]
[PDF 356 KB]
(498)
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38501 |
Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇) |
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Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (3): 38501-038501
[Abstract]
(1007)
[HTML 0 KB]
[PDF 417 KB]
(1514)
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