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Other articles related with "reliability"：
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98505 |
Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲) |
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Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness |
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Chin. Phys. B
2023 Vol.32 (9): 98505-098505
[Abstract]
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96102 |
Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰) |
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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement |
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Chin. Phys. B
2023 Vol.32 (9): 96102-096102
[Abstract]
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58501 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), and Fei Cao(曹菲) |
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Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar |
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Chin. Phys. B
2023 Vol.32 (5): 58501-058501
[Abstract]
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48505 |
Min Ren(任敏), Chang-Yu Ye(叶昶宇), Jian-Yu Zhou(周建宇), Xin Zhang(张新), Fang Zheng(郑芳), Rong-Yao Ma(马荣耀), Ze-Hong Li(李泽宏), and Bo Zhang(张波) |
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Optimal impurity distribution model and experimental verification of variation of lateral doping termination |
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Chin. Phys. B
2023 Vol.32 (4): 48505-048505
[Abstract]
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(98)
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18502 |
Xi Zhu(朱熙), Hui Xu(徐晖), Weiping Yang(杨为平), Zhiwei Li(李智炜), Haijun Liu(刘海军), Sen Liu(刘森), Yinan Wang(王义楠), and Hongchang Long(龙泓昌) |
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High throughput N-modular redundancy for error correction design of memristive stateful logic |
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Chin. Phys. B
2023 Vol.32 (1): 18502-018502
[Abstract]
(289)
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(109)
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13202 |
Zhen Zhang(张镇), Jing-Feng Xiang(项静峰), Bin Xu(徐斌), Pan Feng(冯盼), Guang-Wei Sun(孙广伟),Yi-Ming Meng(孟一鸣), Si-Min-Da Deng(邓思敏达), Wei Ren(任伟),Jin-Yin Wan(万金银), and De-Sheng Lü(吕德胜) |
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Integrated, reliable laser system for an 87Rb cold atom fountain clock |
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Chin. Phys. B
2023 Vol.32 (1): 13202-013202
[Abstract]
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(121)
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28505 |
Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) |
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Impact of STI indium implantation on reliability of gate oxide |
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Chin. Phys. B
2022 Vol.31 (2): 28505-028505
[Abstract]
(321)
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[PDF 1321 KB]
(91)
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58702 |
Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明) |
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Resistive switching memory for high density storage and computing |
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Chin. Phys. B
2021 Vol.30 (5): 58702-058702
[Abstract]
(605)
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[PDF 12767 KB]
(632)
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56110 |
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅) |
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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation |
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Chin. Phys. B
2021 Vol.30 (5): 56110-056110
[Abstract]
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(174)
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128503 |
Saihu Pan(潘赛虎), Zhiqiang Zhu(朱志强), Kangping Liu(刘康平), Hang Yu(于航), Yingjie Liao(廖英杰), Bin Wei(魏斌), Redouane Borsali, and Kunping Guo(郭坤平) |
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Reliability of organic light-emitting diodes in low-temperature environment |
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Chin. Phys. B
2020 Vol.29 (12): 128503-
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47303 |
Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益) |
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Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate |
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Chin. Phys. B
2020 Vol.29 (4): 47303-047303
[Abstract]
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38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
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Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
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Chin. Phys. B
2020 Vol.29 (3): 38501-038501
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128103 |
Yang Li(李杨), Li-Li Hu(胡丽丽), Bo-Bo Yang(杨波波), Ming-Ming Shi(石明明), Jun Zou(邹军) |
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Optical properties of wavelength-tunable green-emitting color conversion glass ceramics |
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Chin. Phys. B
2017 Vol.26 (12): 128103-128103
[Abstract]
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17304 |
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2017 Vol.26 (1): 17304-017304
[Abstract]
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68105 |
Alexander Hanß, Maximilian Schmid, E Liu, Gordon Elger |
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Transient thermal analysis as measurement method for IC package structural integrity |
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Chin. Phys. B
2015 Vol.24 (6): 68105-068105
[Abstract]
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[PDF 6145 KB]
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18505 |
Chen Wei-Zhong (陈伟中), Li Ze-Hong (李泽宏), Zhang Bo (张波), Ren Min (任敏), Zhang Jin-Ping (张金平), Liu Yong (刘永), Li Zhao-Ji (李肇基) |
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A snapback suppressed reverse-conducting IGBT with uniform temperature distribution |
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Chin. Phys. B
2014 Vol.23 (1): 18505-018505
[Abstract]
(676)
[HTML 1 KB]
[PDF 880 KB]
(795)
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107303 |
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress |
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Chin. Phys. B
2013 Vol.22 (10): 107303-107303
[Abstract]
(663)
[HTML 1 KB]
[PDF 382 KB]
(688)
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106108 |
Guo Zu-Qiang (郭祖强), Qian Ke-Yuan (钱可元) |
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Accurate measurement and influence on device reliability of defect density of a light-emitting diode |
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Chin. Phys. B
2013 Vol.22 (10): 106108-106108
[Abstract]
(622)
[HTML 1 KB]
[PDF 287 KB]
(476)
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27202 |
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) |
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Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method |
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Chin. Phys. B
2011 Vol.20 (2): 27202-027202
[Abstract]
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(1554)
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127305 |
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
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Chin. Phys. B
2011 Vol.20 (12): 127305-127305
[Abstract]
(1503)
[HTML 1 KB]
[PDF 271 KB]
(1238)
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1644 |
Liu Hong-Xia (刘红侠), Hao Yue (郝跃), Hawkins I. D., Peaker A. R. |
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Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs |
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Chin. Phys. B
2005 Vol.14 (8): 1644-1648
[Abstract]
(1261)
[HTML 1 KB]
[PDF 252 KB]
(489)
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198 |
Lin Kui-Xun (林揆训), Lin Xuan-Ying (林璇英), Chi Ling-Fei (池凌飞), Yu Chu-Ying (余楚迎), Yao Ruo-He (姚若河), Yu Yun-Peng (余云鹏) |
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The reliability of measurements on electron energy distribution function in silane rf glow discharges |
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Chin. Phys. B
2003 Vol.12 (2): 198-203
[Abstract]
(1316)
[HTML 1 KB]
[PDF 265 KB]
(494)
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