Other articles related with "nitrides":
117702 Yu Xu(徐俞), Jianfeng Wang(王建峰), Bing Cao(曹冰), and Ke Xu(徐科)
  Epitaxy of III-nitrides on two-dimensional materials and its applications
    Chin. Phys. B   2022 Vol.31 (11): 117702-117702 [Abstract] (231) [HTML 0 KB] [PDF 1726 KB] (143)
127301 Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华)
  Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
    Chin. Phys. B   2021 Vol.30 (12): 127301-127301 [Abstract] (498) [HTML 0 KB] [PDF 1807 KB] (74)
57101 K Bettine, O Sahnoun, M Sahnoun, M Driz
  Effect of anionic ordering on the electronic and optical properties of BaTaO2N: TB-mBJ density functional calculation
    Chin. Phys. B   2017 Vol.26 (5): 57101-057101 [Abstract] (665) [HTML 1 KB] [PDF 2586 KB] (500)
46303 Dong Chen(陈东), Ke Cheng(程科), Bei-Ying Qi(齐蓓影)
  The electronic, optical, and thermodynamical properties of tetragonal, monoclinic, and orthorhombic M3N4 (M=Si, Ge, Sn): A first-principles study
    Chin. Phys. B   2017 Vol.26 (4): 46303-046303 [Abstract] (513) [HTML 1 KB] [PDF 913 KB] (352)
67105 S M Khidzir, M F M Halid, W A T Wan Abdullah
  Compton profiles of NiO and TiO2 obtained from first principles GWA spectral function
    Chin. Phys. B   2016 Vol.25 (6): 67105-067105 [Abstract] (463) [HTML 1 KB] [PDF 8857 KB] (312)
48105 Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)
  Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE
    Chin. Phys. B   2016 Vol.25 (4): 48105-048105 [Abstract] (745) [HTML 1 KB] [PDF 447 KB] (338)
27503 Jiang Liang-Bao (姜良宝), Liu Yu (刘宇), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军)
  Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers
    Chin. Phys. B   2015 Vol.24 (2): 27503-027503 [Abstract] (591) [HTML 0 KB] [PDF 1714 KB] (465)
126301 Chen Dong (陈东)
  Investigations of high-pressure and high-temperature behaviors of the newly-discovered willemite-Ⅱ and post-phenacite silicon nitrides
    Chin. Phys. B   2013 Vol.22 (12): 126301-126301 [Abstract] (449) [HTML 1 KB] [PDF 300 KB] (452)
17101 Niu Li (牛丽), Wang Xuan-Zhang (王选章), Zhu Jia-Qi (朱嘉琦), Gao Wei (高巍)
  First-principles studies of the vibrational properties of amorphous carbon nitrides
    Chin. Phys. B   2013 Vol.22 (1): 17101-017101 [Abstract] (887) [HTML 0 KB] [PDF 725 KB] (1260)
93101 Li Xiao-Feng(李晓凤), Zhai Hong-Cun(翟红村), Fu Hong-Zhi(付宏志),Liu Zhong-Li(刘中利), and Ji Guang-Fu(姬广富)
  Physical properties of hexagonal WN2 under pressure
    Chin. Phys. B   2011 Vol.20 (9): 93101-093101 [Abstract] (1405) [HTML 0 KB] [PDF 219 KB] (958)
127306 Le Ling-Cong(乐伶聪), Zhao De-Gang(赵德刚), Wu Liang-Liang(吴亮亮), Deng Yi(邓懿), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Zhang Bao-Shun(张宝顺), and Yang Hui(杨辉)
  The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
    Chin. Phys. B   2011 Vol.20 (12): 127306-127306 [Abstract] (1326) [HTML 1 KB] [PDF 149 KB] (1470)
17804 Fang Hao(方浩),Long Hao(龙浩),Sang Li-Wen(桑立雯), Qi Sheng-Li(齐胜利),Xiong Chang(熊畅),Yu Tong-Jun(于彤军), Yang Zhi-Jian(杨志坚),and Zhang Guo-Yi(张国义)
  Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
    Chin. Phys. B   2011 Vol.20 (1): 17804-017804 [Abstract] (1601) [HTML 0 KB] [PDF 1916 KB] (976)
76803 Wang Lai(汪莱), Wang Jia-Xing(王嘉星), Zhao Wei(赵维), Zou Xiang(邹翔), and Luo Yi(罗毅)
  Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells
    Chin. Phys. B   2010 Vol.19 (7): 76803-076803 [Abstract] (1455) [HTML 1 KB] [PDF 112 KB] (1364)
127807 Hu Long(胡龙),Xu Xue-Wen(徐学文),Lu Zun-Ming(卢遵铭),Fan Ying(范英), Li Yang-Xian(李养贤), and Tang Cheng-Chun(唐成春)
  Luminescence of Ce3+ in lanthanum silicon oxynitride
    Chin. Phys. B   2010 Vol.19 (12): 127807-127807 [Abstract] (1643) [HTML 1 KB] [PDF 473 KB] (1858)
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