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Other articles related with "Schottky contact"：
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37101 |
Qian Liang(梁前), Xiangyan Luo(罗祥燕), Guolin Qian(钱国林), Yuanfan Wang(王远帆), Yongchao Liang(梁永超), and Quan Xie(谢泉) |
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Effects of vacancy and external electric field on the electronic properties of the MoSi2N4/graphene heterostructure |
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Chin. Phys. B
2024 Vol.33 (3): 37101-037101
[Abstract]
(83)
[HTML 1 KB]
[PDF 4108 KB]
(80)
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47701 |
Ji-Yao Du(都继瑶), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), and Jin-Ping Ao(敖金平) |
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Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor |
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Chin. Phys. B
2022 Vol.31 (4): 47701-047701
[Abstract]
(417)
[HTML 1 KB]
[PDF 786 KB]
(126)
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117303 |
Qun-Si Yang(羊群思), Qing Liu(刘清), Dong Zhou(周东), Wei-Zong Xu(徐尉宗), Yi-Wang Wang(王宜望), Fang-Fang Ren(任芳芳), and Hai Lu(陆海) |
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Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template |
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Chin. Phys. B
2021 Vol.30 (11): 117303-117303
[Abstract]
(512)
[HTML 0 KB]
[PDF 997 KB]
(162)
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18501 |
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智) |
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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
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Chin. Phys. B
2021 Vol.30 (1): 18501-
[Abstract]
(411)
[HTML 1 KB]
[PDF 2201 KB]
(215)
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97305 |
Sheng-Xu Dong(董升旭), Yun Bai(白云), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Cheng-Yue Yang(杨成樾), Xin-Yu Liu(刘新宇) |
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Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures |
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Chin. Phys. B
2018 Vol.27 (9): 97305-097305
[Abstract]
(729)
[HTML 1 KB]
[PDF 938 KB]
(254)
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67202 |
Hao-Miao Yu(于浩淼), Yun He(何鋆) |
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How to characterize capacitance of organic optoelectronic devices accurately |
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Chin. Phys. B
2018 Vol.27 (6): 67202-067202
[Abstract]
(564)
[HTML 0 KB]
[PDF 630 KB]
(162)
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27105 |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Chin. Phys. B
2017 Vol.26 (2): 27105-027105
[Abstract]
(693)
[HTML 1 KB]
[PDF 306 KB]
(418)
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127302 |
Han Lin-Chao (韩林超), Shen Hua-Jun (申华军), Liu Ke-An (刘可安), Wang Yi-Yu (王弋宇), Tang Yi-Dan (汤益丹), Bai Yun (白云), Xu Heng-Yu (许恒宇), Wu Yu-Dong (吴煜东), Liu Xin-Yu (刘新宇) |
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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts |
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Chin. Phys. B
2014 Vol.23 (12): 127302-127302
[Abstract]
(630)
[HTML 1 KB]
[PDF 461 KB]
(504)
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(776)
[HTML 1 KB]
[PDF 315 KB]
(1560)
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87305 |
Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Song Qing-Wen(宋庆文), and Jia Ren-Xu(贾仁需) |
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Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights |
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Chin. Phys. B
2011 Vol.20 (8): 87305-087305
[Abstract]
(1899)
[HTML 1 KB]
[PDF 164 KB]
(1319)
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67303 |
Liu Fang(刘芳), Qin Zhi-Xin(秦志新), Xu Fu-Jun(许福军), Zhao Sheng(赵胜), Kang Xiang-Ning(康香宁), Shen Bo(沈波), and Zhang Guo-Yi(张国义) |
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Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN |
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Chin. Phys. B
2011 Vol.20 (6): 67303-067303
[Abstract]
(1674)
[HTML 0 KB]
[PDF 279 KB]
(1885)
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47301 |
Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) |
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PEDOT:PSS Schottky contacts on annealed ZnO films |
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Chin. Phys. B
2011 Vol.20 (4): 47301-047301
[Abstract]
(1373)
[HTML 1 KB]
[PDF 3235 KB]
(2283)
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1618 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts |
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Chin. Phys. B
2009 Vol.18 (4): 1618-1621
[Abstract]
(1651)
[HTML 1 KB]
[PDF 334 KB]
(788)
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1041 |
Han De-Dong (韩德栋), Liu Xiao-Yan (刘晓彦), Kang Jin-Feng (康晋锋), Xia Zhi-Liang (夏志良), Du Gang (杜刚), Han Ru-Qi (韩汝琦) |
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Fabrication and characteristics of Ni-germanide Schottky contacts with Ge |
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Chin. Phys. B
2005 Vol.14 (5): 1041-1043
[Abstract]
(1103)
[HTML 1 KB]
[PDF 239 KB]
(563)
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1110 |
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) |
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Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs |
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Chin. Phys. B
2004 Vol.13 (7): 1110-1113
[Abstract]
(1174)
[HTML 0 KB]
[PDF 190 KB]
(426)
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