| SPECIAL TOPIC — Biophysical circuits: Modeling & applications in neuroscience |
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Memristive neural network circuit with fault tolerance for character recognition |
| Mei Guo(郭梅)1, Jikang Liu(刘继康)1, and Jingzhi Xu(徐景芝)2,† |
1 College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, China; 2 Department of Science and Technology Management, Shandong University of Science and Technology, Qingdao 266590, China |
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Abstract Memristor-based neural networks are one of the most promising approaches for the hardware implementation of artificial neural networks. In this paper, a memristor-based neural network circuit based on a one-memristor-one-resistor (1M1R) synaptic array structure is designed for character recognition. Compared with other memristive synaptic arrays, the 1M1R structure can reduce the number of memristors used. However, memristors may malfunction due to fabrication defects and the influence of external factors, resulting in a decrease in the accuracy of the circuit's character recognition, and a suitable solution needs to be found to improve the stability and durability of the circuit. Therefore, in this paper, a fault-tolerant module with feedback adjustment capability is designed in the memristive neural network circuit that can re-adjust the weights of the memristors through in-situ training to solve multiple faults in the memristive neural network. The effect of fault tolerance is verified by character recognition. The experimental results show that the designed memristive neural network circuit can accurately realize character recognition, and the designed fault-tolerant circuit can well tolerate multiple faults, ensuring stable operation of the circuit under fault conditions.
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Received: 17 December 2025
Revised: 30 January 2026
Accepted manuscript online: 30 January 2026
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PACS:
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07.05.Mh
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(Neural networks, fuzzy logic, artificial intelligence)
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45.30.+s
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(General linear dynamical systems)
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| Fund: Project supported by the Natural Science Foundation of Shandong Province (Grant No. ZR2022MF225) and the National Natural Science Foundation of China (Grant Nos. 62176143 and 62371275). |
Corresponding Authors:
Jingzhi Xu
E-mail: skd994298@sdust.edu.cn
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Cite this article:
Mei Guo(郭梅), Jikang Liu(刘继康), and Jingzhi Xu(徐景芝) Memristive neural network circuit with fault tolerance for character recognition 2026 Chin. Phys. B 35 060702
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[1] Wang X Y, Zhou P F, Eshraghian J K, Lin C Y, Iu H H C, Chang T C and Kang S M 2021 IEEE Trans. Circuits Syst. I-Regul. Pap. 68 264 [2] Rao M Y, Tang H, Wu J B, Song W H, Zhang M, Yin W B, Zhuo Y, Kiani F, Chen B J M, Jiang X Q, Liu H F, Chen H Y, Midya Y, Ye F, Jiang H, Wang Z R, Wu M C, Hu M, Wang H, Xia Q F, Ge N, Li J and Yang J J 2023 Nature 615 823 [3] Chua L 1971 IEEE Trans. Circuit Theory 18 507 [4] Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80 [5] Karimi A and Rezai A 2019 Int. J. Circuit Theory Appl. 47 1933 [6] Rziga F O, Mbarek K, Ghedira S and Besbes K 2019 J. Comput. Electron. 18 1055 [7] Mozaffari S N, Tragoudas S and Haniotakis T 2017 IEEE Trans. 36 1018 [8] Singh A 2020 IETE J. Res. 66 182 [9] Papandroulidakis G, Serb A, Khiat A and Merrett G V 2019 IEEE Trans. Circuits Syst. I-Regul. Pap. 66 3041 [10] Gul F 2019 IEEE Electron Device Lett. 40 643 [11] Guo M, Zhang X W, Dou G and Iu H H C 2025 IEEE Trans. Circuits Syst. I-Regul. Pap. 72 7120 [12] Lee J Y, Han J Y, Kang B X, Hong J Y, Lee C Z and Jeon I 2025 Adv. Mater. 37 2413916 [13] Guo M, Zhang X W, Guo W H, Dou G, Chen D, Wang L H, Iu H H C 2025 IEEE Trans. Circuits Syst. I-Regul. [14] Sun J W, Zhai Y, Liu P and Wang Y F 2025 IEEE Trans. Neural Netw. Learn. Syst. 36 3618 [15] Guo M, Sun J H, Dou G and Iu H H C 2025 IEEE Trans. Circuits Syst. I-Regul. Pap. 72 5998 [16] Dou G, Li D G, Guo M and Iu H H C 2025 IEEE Trans. Circuits Syst. I-Regul. Pap. 72 2566 [17] Wang Y F, Tao K F, Wang Z C and Sun J W 2025 IEEE Trans. Ind. Inform. [18] Sun J W, Gao P L, Liu P and Wang Y F 2025 IEEE Trans. Ind. Inform. [19] Guo M, Kong L T, Dou G and Iu H H C 2024 IEEE Trans. Circuits Syst. I-Regul. Pap. 71 4676 [20] Guo M, Zhang D Y, Guo W H, Dou G and Sun J W 2024 IEEE Trans. Cogn. Dev. Syst. 17 155 [21] Guo M, Zheng C G, Dou G and Iu H H C A 2026 IEEE Trans. Circuits Syst. I-Regul. Pap. 73 850 [22] Lei Z, Guo Y T and Ma J 2025 Nonlinear Dyn. 113 29999 [23] Wang B C, Guo Y T, Jia J N and Ma J 2025 Euro. Phys. J. Plus 140 706 [24] Ma J 2025 Nonlinear Dyn. 113 25365 [25] Lu J L, Gao J, Cai J Y, Chen L X, Zhang G Y and Xu Q 2025 Chin. Phys. B 34 018703 [26] Yan X, Wu F Q, Yao W, Zhou P and Liu Y Z 2024 Chin. Phys. B 33 028705 [27] Lu J Y, Wang G Y, Xu Y, Ren G D and Ma J 2024 Chin. Phys. B 33 048701 [28] Li J, Xin Y, Sun B, Gu D S, Liao C R, Hu X F, Wang L D, Duan S K and Zhou G D 2025 J. Semicond. 46 012604 [29] Xiao H, Zhou Y, Gao T T, Duan S K, Chen G R and Hu X F 2023 IEEE J. Emerg. Sel. Top. Circuits Syst. 13 344 [30] Zhao H, Liu Z W, Tang J S, Gao B, Qin Q, Li J M, Zhou Y, Yao P, Xi Y, Lin Y D and Wu H Q 2023 Nat. Commun. 14 2276 [31] Kim N, Oh J, Kim S, Cha J H, Choi J, Im S G, Choi S Y and Jang B C 2024 Adv. Funct. Mater. 34 2305136 [32] Wu X L, Dang B J, Wang H, Wu X L and Yang Y C 2021 Adv. Intell. Syst. 4 2100151 [33] Yang L, Zeng Z G and Shi X M 2019 Neurocomputing 363 114 [34] Chen C Y, Shih H C, Wu C W, Lin C H, Chiu P F, Sheu S S and Chen F T 2015 IEEE Trans. Comput. 64 180 [35] Sun X Y and Yu S M 2019 IEEE J. Emerg. Sel. Top. Circuits Syst. 9 570 [36] Zhang B G, Uysal N, Fan D L and Ewetz R 2020 IEEE Trans. Comput.- Aided Des. Integr. Circuits Syst. 39 2448 [37] Liu P, You Z Q, Wu J G, Liu B S, Han Y H and Chakrabarty K 2021 IEEE Trans. Circuits Syst. 68 4444 [38] Chen C Y and Chakrabarty K 2022 IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 41 2301 [39] Morgul M C, Frontini L, Tunali O, Anghel L, Ciriani V, Vatajelu E I, Moritz C A, StanMR, Alexandrescu D and AltunM2021 IEEE Trans. Nanotechnol. 20 39 [40] Bi Y T, Xu Q, Geng H, Chen S and Kang Y 2023 IEEE Trans. Circuits Syst. II-Express Briefs 70 2221 [41] Wang Z W, Yin M H, Zhang T, Cai Y M, Wang Y Y, Yang Y C and Huang R 2016 Nanoscale 8 14015 [42] Chen A 2016 Solid-State Electron. 125 25 [43] Berdan R, Prodromakis T and Toumazou C 2012 Electron. Lett. 48 1105 [44] Ghofrani A, Lastras-MontanoMA, Gaba S, Payvand M, LuW, Theogarajan L and Cheng K T 2015 J. Emerg. Technol. Comput. Syst. 12 1 [45] Guo M, Zhu Y L, Liu R Y, Zhao K X and Dou G 2022 Neurocomputing 472 12 [46] Zhang X R, Wang X Y, Ge Z Y, Li Z L, Wu M Y and Borah S 2022 Micromachines 13 2074 [47] Quan C H, FoudaME, Lee S, Jung G J, Lee J, Eltawil A E and Kurdahi F 2023 IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 42 2174 [48] Reddy M A, Pandeeswari R and Ko S B 2023 IEEE Trans. Circuits Syst. II-Express Briefs 70 959 [49] Shi F, Wang K H, Cao Y H and Mou J A 2026 J. Emerg. Technol. Comput. Syst. 195 108921 |
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