Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition

doi:10.1088/1674-1056/acc3fd

Abstract Resistive switching (RS) devices have great application prospects in the emerging memory field and neuromorphic field, but their stability and unclear RS mechanism limit their relevant applications. In this work, we construct a hydrogenated Au/SnO₂ nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the I_on/I_off ratio increases from 20 to 10⁴ when the read voltage decreases from 3.1 V to -1 V under the condition of electric field. Moreover, the rectification ratio can reach as high as 10⁴ owing to oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO₂ NW/Au device. Our results provide a strategy for designing high-performance memristive devices based on SnO₂ NWs.

Keywords: Au/SnO₂ NW/Au device resistive switching characteristics resistive switching mechanism

Received: 30 January 2023
Revised: 08 March 2023
Accepted manuscript online: 14 March 2023

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	81.07.Gf	(Nanowires)
	85.35.-p	(Nanoelectronic devices)
	66.30.Pa	(Diffusion in nanoscale solids)

Fund: Project supported by Chenzhou Science and Technology Plan Project of China (Grant No. ZDYF2020159) and Scientific Research Project of Hunan Provincial Department of Education (Grant No. 21C0708).

Corresponding Authors: Ya-Qi Chen
E-mail: chenyaqi@xnu.edu.cn

Cite this article:

Ya-Qi Chen(陈亚琦), Zheng-Hua Tang(唐政华), Chun-Zhi Jiang(蒋纯志), and De-Gao Xu(徐徳高) Resistive switching properties of SnO₂ nanowires fabricated by chemical vapor deposition 2023 Chin. Phys. B 32 097302

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