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Chin. Phys. B, 2022, Vol. 31(1): 018503    DOI: 10.1088/1674-1056/ac05b0

Voltage-controllable magnetic skyrmion dynamics for spiking neuron device applications

Ming-Min Zhu(朱明敏), Shu-Ting Cui(崔淑婷), Xiao-Fei Xu(徐晓飞), Sheng-Bin Shi(施胜宾), Di-Qing Nian(年迪青), Jing Luo(罗京), Yang Qiu(邱阳), Han Yang(杨浛), Guo-Liang Yu(郁国良), and Hao-Miao Zhou (周浩淼)§
Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, China
Abstract  Voltage-controlled magnetic skyrmions have attracted special attention because they satisfy the requirements for well-controlled high-efficiency and energy saving for future skyrmion-based neuron device applications. In this work, we propose a compact leaky-integrate-fire (LIF) spiking neuron device by using the voltage-driven skyrmion dynamics in a multiferroic nanodisk structure. The skyrmion dynamics is controlled by well tailoring voltage-induced piezostrains, where the skyrmion radius can be effectively modulated by applying the piezostrain pulses. Like the biological neuron, the proposed skyrmionic neuron will accumulate a membrane potential as skyrmion radius is varied by inputting the continuous piezostrain spikes, and the skyrmion radius will return to the initial state in the absence of piezostrain. Therefore, this skyrmion radius-based membrane potential will reach a definite threshold value by the strain stimuli and then reset by removing the stimuli. Such the LIF neuronal functionality and the behaviors of the proposed skyrmionic neuron device are elucidated through the micromagnetic simulation studies. Our results may benefit the utilization of skyrmionic neuron for constructing the future energy-efficient and voltage-tunable spiking neural networks.
Keywords:  magnetic skyrmion      leaky-integrate-fire      multiferroic heterostructure      artificial neuron  
Received:  20 February 2021      Revised:  18 May 2021      Accepted manuscript online:  27 May 2021
PACS:  85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)  
  84.35.+i (Neural networks)  
  75.70.Kw (Domain structure (including magnetic bubbles and vortices))  
  75.78.Cd (Micromagnetic simulations ?)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11902316, 51902300, and 11972333) and the Natural Science Foundation of Zhejiang Province, China (Grant Nos. LQ19F010005, LY21F010011, and LZ19A020001).
Corresponding Authors:  Guo-Liang Yu, Hao-Miao Zhou     E-mail:;

Cite this article: 

Ming-Min Zhu(朱明敏), Shu-Ting Cui(崔淑婷), Xiao-Fei Xu(徐晓飞), Sheng-Bin Shi(施胜宾), Di-Qing Nian(年迪青), Jing Luo(罗京), Yang Qiu(邱阳), Han Yang(杨浛), Guo-Liang Yu(郁国良), and Hao-Miao Zhou (周浩淼) Voltage-controllable magnetic skyrmion dynamics for spiking neuron device applications 2022 Chin. Phys. B 31 018503

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