1 State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China; 2 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; 3 International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
Abstract Layered ReS2 with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS2 are still very limited. Here, we studied the anisotropic photoresponse of layered ReS2 phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS2 transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS2 interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS2 transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.
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