Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions

doi:10.1088/1674-1056/23/11/116102

Abstract

By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al_xGa_1-xN epitaxial films with various Al compositions (x= 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al_xGa_1-xN films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al_xGa_1-xN films.

Keywords: localized deep levels current-voltage capacitance-voltage high-temperature deep-level transient spectroscopy techniques

Received: 11 April 2014
Revised: 27 May 2014
Accepted manuscript online:

PACS:	61.66.Dk	(Alloys )
	61.72.-y	(Defects and impurities in crystals; microstructure)
	61.72.J-	(Point defects and defect clusters)
	61.72.jd	(Vacancies)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2012CB619300) and the National Natural Science Foundation of China (Grant Nos. 11174008 and 61361166007).

Corresponding Authors: Shen Bo
E-mail: bshen@pku.edu.cn

Cite this article:

Shi Li-Yang (时俪洋), Shen Bo (沈波), Yan Jian-Chang (闫建昌), Wang Jun-Xi (王军喜), Wang Ping (王平) Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions 2014 Chin. Phys. B 23 116102

[1]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[2]	Rumyantsev S L, Pala N, Shur M S, Gaska R, Levinshtein M E, Adivarahan V, Yang J, Simin G and Asif K M 2001 Appl. Phys. Lett. 79 866
[3]	Park Y S, Park C J, Park C M, Na J H, Oh J S, Yoon I T, Cho H Y, Kang T W and Oh J E 2005 Appl. Phys. Lett. 86 152109
[4]	Özdemir A F, Turut A and Kokce A 2003 Thin Solid Films 425 210
[5]	Nam K B, Nakarmi M L, Lin J Y and Jiang H X 2005 Appl. Phys. Lett. 86 222108
[6]	Nepal N, Nakarmi M L, Lin J Y and Jiang H X 2006 Appl. Phys. Lett. 89 092107
[7]	Sun Q, Wang H, Jiang D S, Jin R Q, Huang Y, Zhang S M, Yang H, Jahn U and Ploog K H 2006 J. Appl. Phys. 100 123101
[8]	Arehart A R, Allerman A A and Ringel S A 2011 J. Appl. Phys. 109 114506
[9]	Götz W, Johnson N M, Bremser M D and Davis R F 1996 Appl. Phys. Lett. 69 2379
[10]	Ooyama K, Sugawara K, Okuzaki S, Taketomi H, Miyake H, Hiramatsu K and Hashizume T 2010 Jpn. J. Appl. Phys. 49 101001
[11]	Qiao D, Yu L S, Lau S S, Redwing J M, Lin J Y and Jiang H X 2000 J. Appl. Phys. 87 801
[12]	Hashizume T, Kotani J and Hasegawa H 2004 Appl. Phys. Lett. 84 4884
[13]	Meneghini M, Bertin M, Stocco A, Santo G D, Marcon D, Malinowski P E, Chini A, Meneghesso G and Zanoni E 2013 Appl. Phys. Lett. 102 163501
[14]	Shi L Y, Shen B, Lu L W, Yan J C, Wang J X and Wang P 2014 Chin. Phys. B (In Press)
[15]	Hwang J, Schaff W J, Eastman L F, Bradley S T, Brillson L J, Look D C, Wu J, Walukiewicz W, Furis M and Cartwright A N 2002 Appl. Phys. Lett. 81 5192
[16]	Götz W, Johnson N M, Amano H and Akasaki I 1994 Appl. Phys. Lett. 65 463
[17]	Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
[18]	Haase D, Schmid M, Kuürner W, Dörnen A, Härle V, Scholz F, Burkard M and Schweizer H 1996 Appl. Phys. Lett. 69 2525
[19]	Lee W I, Huang T C, Guo J D and Feng M S 1995 Appl. Phys. Lett. 67 1721
[20]	Cho H K, Kim K S, Hong C H and Lee H J 2001 J. Cryst. Growth 223 38
[21]	Fang Z Q, Hemsky J W, Look D C and Mack M P 1998 Appl. Phys. Lett. 72 448
[22]	Chen S, Honda U, Shibata T, Matsumura T, Tokuda Y, Ishikawa K, Hori M, Ueda H, Uesugi T and Kachi T 2012 J. Appl. Phys. 112 053513
[23]	Fang Z Q, Look D C, Jasinski J, Benamara M, Weber Z L and Molnar R J 2001 Appl. Phys. Lett. 78 332
[24]	Polyakov A Y, Smirnov N B, Govorkov N V and Redwing J M 1998 Solid-Sate Electron. 42 831
[25]	Muret P, Philippe A, Monroy E, Munoz E, Beaumont B, Omnes F and Gibart P 2001 Mater. Sci. Eng. B 82 91
[26]	Ito T, Yoshikawa M and Egawa T 2008 Phys. Stat. Solid C 5 2998
[27]	Fang Z Q, Look D C, Kim D H and Adesida I 2005 Appl. Phys. Lett. 87 182115
[28]	Götz W, Johnson N M, Bremser M D and Davis R F 1996 Appl. Phys. Lett. 69 2379
[29]	Osaka J, Ohno Y, Kishimoto S, Maezawa K and Hizutani T 2005 Appl. Phys. Lett. 87 222112
[30]	Uedono A, Ishibashi S, Keller S, Moe C, Cantu P, Katona T M, Kamber D S, Wu Y, Letts E, Newman S A, Nakamura S, Speck J S, Mishra U K, DenBaars S P, Onuma T and Chichibu S F 2009 J. Appl. Phys. 105 054501
[31]	Bruner D, Angerer H, Bustarret E, Freudenberg F, Dimitrov R, Amabacher O and Stutzmann M 1997 J. Appl. Phys. 82 5090
[32]	Nikishin S A, Faleev N N, Zubrilov A S, Antipov V G and Temkin H 2000 Appl. Phys. Lett. 76 3028
[33]	Holtz M, Prokofyeva T, Seon M, Copeland K, Vanbuskirk J, Willians S, Nikishin S A, Tretyakov V, and Temkin H 2001 J. Appl. Phys. 89 7977
[34]	Walukiewicz W, Li S X, Wu J, Yu K M, Ager Ⅲ J M, Haller E E, Lu H and Schaff W J 2004 J. Cryst. Gowth 269 119
[35]	Walukiewicz W 1987 J. Vac. Sci. Technol. B 5 1062
[36]	Walukiewicz W 1988 J. Vac. Sci. Technol. B 6 1257
[37]	Janotti A and van de Wall C G 2005 Appl. Phys. Lett. 87 122102
[38]	Walle C G V, Stampfl C and Neugebauer J 1998 J. Cryst.Growth 189-190 505
[39]	Onuma T, Chichibu S F, Uedono A, Sota T, Cantu P, Katona T M, Keading J F, Keller S, Mishra U K, Nakamura S and Denbarrs S P 2004 J. Appl. Phys. 95 2495
[40]	Zhou H B and Jin S 2013 Chin. Phys. B 22 076104

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Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions

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Localized deep levels in Al_xGa_1-xN epitaxial films with various Al compositions