A method of generating random bits by using electronic bipolar memristor

doi:10.1088/1674-1056/ab77fd

Abstract The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory. However, such a weakness can be used as an asset for generating the random bits, which is valuable in a hardware security system. In this work, a forming-free electronic bipolar Pt/Ti/Ta₂O₅/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device. The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the “oxygen grabbing” process. The stochasticity of the electrons trapping/de-trapping governs the random distribution of the set/reset switching voltages of the device, making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal. The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.

Keywords: memristor resistance switching electrons trapping/de-trapping random bits

Received: 15 September 2019
Revised: 23 January 2020
Accepted manuscript online:

PACS:	85.35.-p	(Nanoelectronic devices)
	77.80.Fm	(Switching phenomena)
	05.40.-a	(Fluctuation phenomena, random processes, noise, and Brownian motion)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61832007) and the National Key Research and Development Program of China (Grant No. 2018YFB1003304).

Corresponding Authors: Nuo Xu, Liang Fang
E-mail: oun_ux@163.com;lfang@nudt.edu.cn

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Bin-Bin Yang(杨彬彬), Nuo Xu(许诺), Er-Rui Zhou(周二瑞), Zhi-Wei Li(李智炜), Cheng Li(李成), Pin-Yun Yi(易品筠), Liang Fang(方粮) A method of generating random bits by using electronic bipolar memristor 2020 Chin. Phys. B 29 048505

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A method of generating random bits by using electronic bipolar memristor

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