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Chin. Phys. B, 2020, Vol. 29(1): 018104    DOI: 10.1088/1674-1056/ab5781
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Epitaxial growth and air-stability of monolayer Cu2Te

K Qian(钱凯)1, L Gao(高蕾)1, H Li(李航)1, S Zhang(张帅)1, J H Yan(严佳浩)1, C Liu(刘晨)2, J O Wang(王嘉鸥)2, T Qian(钱天)1,3, H Ding(丁洪)1,3, Y Y Zhang(张余洋)1,3, X Lin(林晓)1,3, S X Du(杜世萱)1,3, H-J Gao(高鸿钧)1,3
1 Institute of Physics&University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
Abstract  A new two-dimensional atomic crystal, monolayer cuprous telluride (Cu2Te) has been fabricated on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE). The low-energy electron diffraction (LEED) characterization shows that the monolayer Cu2Te forms a √3×√3 superstructure with respect to the graphene substrate. The atomic structure of the monolayer Cu2Te is investigated through a combination of scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations. The stoichiometry of the Cu2Te sample is verified by x-ray photoelectron spectroscopy (XPS) measurement. The angle-resolved photoemission spectroscopy (ARPES) data present the electronic band structure of the sample, which is in good agreement with the calculated results. Furthermore, air-exposure experiments reveal the chemical stability of the monolayer Cu2Te. The fabrication of this new 2D material with a particular structure may bring new physical properties for future applications.
Keywords:  cuprous telluride (Cu2Te)      scanning tunneling microscopy (STM)      density functional theory (DFT)      chemical stability  
Received:  01 November 2019      Revised:  08 November 2019      Accepted manuscript online: 
PACS:  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
  81.05.Zx (New materials: theory, design, and fabrication)  
  81.07.Bc (Nanocrystalline materials)  
Corresponding Authors:  X Lin, S X Du     E-mail:  sxdu@iphy.ac.cn;xlin@ucas.ac.cn

Cite this article: 

K Qian(钱凯), L Gao(高蕾), H Li(李航), S Zhang(张帅), J H Yan(严佳浩), C Liu(刘晨), J O Wang(王嘉鸥), T Qian(钱天), H Ding(丁洪), Y Y Zhang(张余洋), X Lin(林晓), S X Du(杜世萱), H-J Gao(高鸿钧) Epitaxial growth and air-stability of monolayer Cu2Te 2020 Chin. Phys. B 29 018104

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