A novel integrated ultraviolet photodetector based on standard CMOS process

doi:10.1088/1674-1056/24/3/038501

Abstract A novel integrated ultraviolet (UV) photodetector has been proposed, which realizes a high UV selectivity by combining a conventional UV-selective photodiode with an extra infrared (IR) photodiode. The IR photodiode is designed for compensating the photocurrent response of the UV photodiode in the infrared band and is 15 times smaller than the UV one. The integrated photodetector has been fabricated in a 0.35 μm standard CMOS technology. Some critical performance indices of this new structure photodetector, such as spectral responsivity, breakdown voltage, quenching waveform, and transient response, are measured and analyzed. Test results show that the complementary UV-IR photodetector has a maximum spectral responsivity of 0.27 A · W^-1 at the wavelength of 400 nm. The device has a high UV selectivity of 3000, which is much higher than that of the single UV photodiode.

Keywords: ultraviolet photodetector compensating parasitic photocurrent UV selectivity CMOS process

Received: 10 August 2014
Revised: 13 October 2014
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274043), the Key Project of the Ministry of Education of China (Grant No. 212125), and the State Key Program of the National Natural Science Foundation of China (Grant No. 61233010).

Corresponding Authors: Jin Xiang-Liang
E-mail: jinxl@xtu.edu.cn

Cite this article:

Wang Han (汪涵), Jin Xiang-Liang (金湘亮), Chen Chang-Ping (陈长平), Tian Man-Fang (田满芳), Zhu Ke-Han (朱柯翰) A novel integrated ultraviolet photodetector based on standard CMOS process 2015 Chin. Phys. B 24 038501

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A novel integrated ultraviolet photodetector based on standard CMOS process

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