Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode
Jia Yun-Peng (贾云鹏)a, Zhao Bao (赵豹)a, Yang Fei (杨霏)b, Wu Yu (吴郁)a, Zhou Xuan (周璇)a, Li Zhe (李哲)a, Tan Jian (谭健)a
a College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China; b State Grid Smart Electrical Engineering, Beijing 100192, China
Abstract The temperature dependences of forward voltage drop (VF) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (EC-0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested VF results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD.
(Charge carriers: generation, recombination, lifetime, and trapping)
Fund: Project supported by the Doctoral Fund of Ministry of Education of China (Grant No. 20111103120016) and the State Grid Corporation of China Program of Science and Technology, China (Grant No. 5455DW140003).
Corresponding Authors:
Zhao Bao
E-mail: summer201302@163.com
Cite this article:
Jia Yun-Peng (贾云鹏), Zhao Bao (赵豹), Yang Fei (杨霏), Wu Yu (吴郁), Zhou Xuan (周璇), Li Zhe (李哲), Tan Jian (谭健) Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode 2015 Chin. Phys. B 24 126104
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