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Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene |
Hu Bo (胡波) |
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.
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Received: 09 September 2014
Revised: 20 March 2015
Accepted manuscript online:
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PACS:
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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72.20.Dp
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(General theory, scattering mechanisms)
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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Corresponding Authors:
Hu Bo
E-mail: hubo2011@semi.ac.cn
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Cite this article:
Hu Bo (胡波) Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene 2015 Chin. Phys. B 24 087101
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[1] |
Zhang Y B, Tang T T, Girit C, Hao Z, Martin M C, Zett A, Crommie M F, Shen Y R and Wang F 2009 Nature 459 820
|
[2] |
Ohta T, Bostwick A, Seyller T, Horn K and Rotenberg E 2006 Science 313 951
|
[3] |
Sarma S D, Adam S, Hwang E H and Rossi E 2011 Rev. Mod. Phys. 83 407
|
[4] |
Yu W J, Liao L, Chae S H, Lee Y H and Duan X F 2011 Nano Lett. 11 4759
|
[5] |
Morozov S V, Novoselov K S, Katsnelson M I, Schedin F, Elias D C, Jaszczak J A and Geim A K 2008 Phys. Rev. Lett. 100 016602
|
[6] |
Zhu W J, Perebeinos V, Freitag M and Avouris P 2009 Phys. Rev. B 80 235402
|
[7] |
Mikito Koshino and Tsuneya Ando 2006 Phys. Rev. B 73 245403
|
[8] |
Maxim Trushin 2012 Europhys. Lett. 98 47007
|
[9] |
Jian Li, Ivar Martin, Markus Büttiker and Alberto F Morpurgo 2011 Nat. Phys. 7 38
|
[10] |
Alfonso Reina, Xiaoting Jia, John Ho, Daniel Nezich, Hyungbin Son, Vladimir Bulovic, Mildred S Dresselhaus and Jing Kong 2009 Nano Lett. 9 30
|
[11] |
Phillip N First, Walt A de Heer, Thomas Seyller, Claire Berger, Joseph A Stroscio and Jeong-Sun Moon 2010 MRS Bull. 35 296
|
[12] |
Elena Stolyarova, Kwang Taeg Rim, Sunmin Ryu, Janina Maultzsch, Philip Kim, Louis E Brus, Tony F Heinz, Mark S Hybertsen, George W and Flynn 2007 Proc. Natl. Acad. Sci. USA 104 9209
|
[13] |
Sarma S D, Hwang E H and Rossi E 2010 Phys. Rev. B 81 161407
|
[14] |
McCann E and Fal'ko V I 2006 Phys. Rev. Lett. 96 086805
|
[15] |
Zhang Y B, Brar V W, Girit C, Zettl A and Crommie M F 2009 Nat. Phys. 5 722
|
[16] |
Deshpande A, Bao W, Zhao Z, Lau C N and LeRoy B J 2009 Appl. Phys. Lett. 95 243502
|
[17] |
Falkovsky L A 2009 Phys. Rev. B 80 113413
|
[18] |
Fogler M M and McCann E 2010 Phys. Rev. B 82 197401
|
[19] |
Castro E V, Novoselov K S, Morozov S V, Peres N M, Santos J M and Nilsson J 2007 Phys. Rev. Lett. 99 216802
|
[20] |
Zhang L M, Li Z Q, Basov D N and Fogler M M 2008 Phys. Rev. B 78 235408
|
[21] |
Xiao S D, Chen J H, Adam S, Williams E D and Fuhrer M S 2010 Phys. Rev. B 82 041406
|
[22] |
Li Q Z, Hwang E H and Sarma S D 2011 Phys. Rev. B 84 115442
|
[23] |
Sarma S D, Hwang E H and Li Q Z 2012 Phys. Rev. B 85 195451
|
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