Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

doi:10.1088/1674-1056/23/12/120308

Abstract InGaAs/InP single photon avalanche diodes (SPADs) are more and more available in many research fields. They are affected by afterpulsing which leads to a poor single photon detection probability. We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an application specific integrated circuit (ASIC). It can quench the avalanche rapidly and then reduce the afterpulse rate. Also this quenching circuit can operate in both free-running and gated modes. Furthermore, a new technique is introduced to characterize the influence of the higher order of afterpulses, which uses a program running on a field programmable gate array (FPGA) integrated circuit.

Keywords: single photon detection active quenching afterpulse quantum key distribution

Received: 28 June 2014
Revised: 18 September 2014
Accepted manuscript online:

PACS:	03.67.Dd	(Quantum cryptography and communication security)
	03.67.Hk	(Quantum communication)
	03.67.-a	(Quantum information)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61178010), the Fundamental Research Funds for the Central Universities, China (Grant No. bupt 2014TS01), the Fund of State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China (Grant No. 201318), and the National Program for Basic Research of China (Grant No. 2010CB923202).

Corresponding Authors: Ma Hai-Qiang
E-mail: hqma@bupt.edu.cn

Cite this article:

Ma Hai-Qiang (马海强), Yang Jian-Hui (杨建会), Wei Ke-Jin (韦克金), Li Rui-Xue (李瑞雪), Zhu Wu (朱武) Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes 2014 Chin. Phys. B 23 120308

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Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

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