Abstract We propose a simple method to calculate the spectrum of spontaneous terahertz (THz) emission from hot carriers in two-dimensional semiconductors by means of transport quantities, which are easily obtained during the process of solving the transport problem using the recently developed balance-equation approach for THz-driven transport. The method has been applied to examine the surface emission from a GaAs/AlGaAs heterojunction and the edge emission from a GaAs-based multiple quantum-well system subjected to strong dc biases. The theoretical results obtained are in reasonably good agreement with measurements.
Received: 12 March 2001
Revised: 10 May 2001
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60076011), the Special Foundation for State Key Basic Research Program of China (Grant No. 2000683), the Chinese Ministry of Science and Technology, the Shanghai Municipal Co
Cite this article:
Lei Xiao-lin (雷啸霖), Liu Shi-yong (刘世勇) TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS 2001 Chinese Physics 10 840
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