Two crucial factors affecting quality of GaAs on Ge substrates

Abstract

Abstract High quality GaAs films with fine surface and GaAs/Ge interfaces on Ge have been achieved via Molecular beam epitaxy (MBE). The influences of the low temperature annealing and low temperature epitaxy to the quality of the flim when GaAs grown on a (100) 6° offcut towards <111> Ge substrate have been investigated by analyzing and comparing the GaAs films which were fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth plays a vital role in improving the quality of GaAs films on Ge substrate.

Keywords: molecular beam epitaxy low temperature annealing low temperature epitaxy

Received: 28 August 2013
Revised: 04 October 2013
Accepted manuscript online:

Corresponding Authors: Chuang Deng

Cite this article:

Chuang Deng Men Chuan-Ling Da Chen Two crucial factors affecting quality of GaAs on Ge substrates Chin. Phys. B 0

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Two crucial factors affecting quality of GaAs on Ge substrates

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