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Chin. Phys. B, 2021, Vol. 30(7): 078506    DOI: 10.1088/1674-1056/abff23
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene

Min Zhou(周敏)1,2, Yukun Zhao(赵宇坤)1,†, Lifeng Bian(边历峰)1, Jianya Zhang(张建亚)1,2, Wenxian Yang(杨文献)1, Yuanyuan Wu(吴渊渊)1, Zhiwei Xing(邢志伟)1,2, Min Jiang(蒋敏)1,2, and Shulong Lu(陆书龙)1,‡
1 Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences(CAS), Suzhou 215123, China;
2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Abstract  Due to the wide application of UV-A (320 nm-400 nm) and UV-C (200 nm-280 nm) photodetectors, dual-wavelength (UV-A/UV-C) photodetectors are promising for future markets. A dual-wavelength UV photodetector based on vertical (Al,Ga)N nanowires and graphene has been demonstrated successfully, in which graphene is used as a transparent electrode. Both UV-A and UV-C responses can be clearly detected by the device, and the rejection ratio (R254 nm/R450 nm) exceeds 35 times at an applied bias of -2 V. The short response time of the device is less than 20 ms. Furthermore, the underlying mechanism of double ultraviolet responses has also been analyzed systematically. The dual-wavelength detections could mainly result from the appropriate ratio of the thicknesses and the enough energy band difference of (Al,Ga)N and GaN sections.
Keywords:  dual-wavelength ultraviolet photodetector      (Al,Ga)N nanowire      graphene      molecular beam epitaxy  
Received:  05 February 2021      Revised:  09 April 2021      Accepted manuscript online:  08 May 2021
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  78.67.Uh (Nanowires)  
  78.66.Fd (III-V semiconductors)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB0406602), Natural Science Foundation of Jiangsu Province, China (Grant No. BK20180252), Key Research Program of Frontier Sciences, CAS (Grant No. ZDBS-LY-JSC034), the National Natural Science Foundation of China (Grant Nos. 61804163, 61875224, and 61827823), the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2018005), Natural Science Foundation of Jiangxi Province, China (Grant No. 20192BBEL50033), Research Program of Scientific Instrument, Equipment of CAS (Grant No. YJKYYQ20200073), SINANO (Grant Nos. Y8AAQ21001 and Y4JAQ21001), and Vacuum Interconnected Nanotech Workstation (Grant Nos. Nano-X and B2006).
Corresponding Authors:  Yukun Zhao, Shulong Lu     E-mail:  ykzhao2017@sinano.ac.cn;sllu2008@sinano.ac.cn

Cite this article: 

Min Zhou(周敏), Yukun Zhao(赵宇坤), Lifeng Bian(边历峰), Jianya Zhang(张建亚), Wenxian Yang(杨文献), Yuanyuan Wu(吴渊渊), Zhiwei Xing(邢志伟), Min Jiang(蒋敏), and Shulong Lu(陆书龙) Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene 2021 Chin. Phys. B 30 078506

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