Abstract The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 ℃ for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.
Fund: Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Municipal Science and Technology Commission, China (Grant Nos. 09DZ1141400 and 09520714900), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176).
Corresponding Authors:
Liu Xue-Chao
E-mail: xcliu@mail.sic.ac.cn
Cite this article:
Chang Shao-Hui (常少辉), Liu Xue-Chao (刘学超), Huang Wei (黄维), Xiong Ze (熊泽), Yang Jian-Hua (杨建华), Shi Er-Wei (施尔畏) Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing 2012 Chin. Phys. B 21 096801
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Band alignment of Ga2O3/6H-SiC heterojunction Chang Shao-Hui(常少辉), Chen Zhi-Zhan(陈之战), Huang Wei(黄维), Liu Xue-Chao(刘学超), Chen Bo-Yuan(陈博源), Li Zheng-Zheng(李铮铮), and Shi Er-Wei(施尔畏) . Chin. Phys. B, 2011, 20(11): 116101.
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