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Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing |
Chang Shao-Hui (常少辉), Liu Xue-Chao (刘学超), Huang Wei (黄维), Xiong Ze (熊泽), Yang Jian-Hua (杨建华), Shi Er-Wei (施尔畏) |
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China |
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Abstract The effect of surface morphology of 6H-SiC substrate on the ohmic contact properties of Ti/6H-SiC structure is studied. The H-terminated surface on Si-face 6H-SiC is obtained by both dipping SiC into HF acid solution for 15 s and thermal heating SiC in hydrogen atmosphere at 1100 ℃ for 10 min, while the H-terminated surface on C-face 6H-SiC could be obtained only by the latter method. Ti is deposited on Si-face and C-face SiC substrates with H-terminated surfaces and ohmic contact is obtained without high-temperature annealing.
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Received: 09 February 2012
Revised: 02 March 2012
Accepted manuscript online:
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PACS:
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68.55.ag
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(Semiconductors)
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73.40.Cg
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(Contact resistance, contact potential)
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Fund: Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Municipal Science and Technology Commission, China (Grant Nos. 09DZ1141400 and 09520714900), and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176). |
Corresponding Authors:
Liu Xue-Chao
E-mail: xcliu@mail.sic.ac.cn
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Cite this article:
Chang Shao-Hui (常少辉), Liu Xue-Chao (刘学超), Huang Wei (黄维), Xiong Ze (熊泽), Yang Jian-Hua (杨建华), Shi Er-Wei (施尔畏) Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing 2012 Chin. Phys. B 21 096801
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