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An RLC interconnect analyzable crosstalk model considering self-heating effect |
Zhu Zhang-Ming(朱樟明)† and Liu Shu-Bin(刘术彬) |
School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract According to the thermal profile of actual multilevel interconnects, in this paper we propose a temperature distribution model of multilevel interconnects and derive an analytical crosstalk model for the distributed resistance-inductance-capacitance (RLC) interconnect considering effect of thermal profile. According to the 65-nm complementary metal-oxide semiconductor (CMOS) process, we compare the proposed RLC analytical crosstalk model with the Hspice simulation results for different interconnect coupling conditions and the absolute error is within 6.5%. The computed results of the proposed analytical crosstalk model show that RCL crosstalk decreases with the increase of current density and increases with the increase of insulator thickness. This analytical crosstalk model can be applied to the electronic design automation (EDA) and the design optimization for nanometer CMOS integrated circuits.
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Received: 08 July 2011
Revised: 21 September 2011
Accepted manuscript online:
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PACS:
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84.30.-r
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(Electronic circuits)
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84.30.Bv
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(Circuit theory)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60971066). |
Corresponding Authors:
Zhu Zhang-Ming,zmyh@263.net
E-mail: zmyh@263.net
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Cite this article:
Zhu Zhang-Ming(朱樟明) and Liu Shu-Bin(刘术彬) An RLC interconnect analyzable crosstalk model considering self-heating effect 2012 Chin. Phys. B 21 028401
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[1] |
Ajami A H, Banerjee K and Pedram M 2005 IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems 24 849
|
[2] |
Wang N L and Zhou R D 2004 J. Semicond. 25 1510
|
[3] |
Chiang T Y and Saraswat K C 2003 Proceedings of Symposium on VLSI Circuits, August 16-18, 2003, Kyoto, Japan p. 275
|
[4] |
Yang Y T, Leng P and Dong G 2008 J. Semicond. 29 1843
|
[5] |
Zhu Z M, Zhong B and Yang Y T 2010 Acta Phys. Sin. 59 4895 (in Chinese)
|
[6] |
Brajesh K K and Sankar S 2009 Int. J. Electron. 96 1095
|
[7] |
Payam H, Massoud P 2005 IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems 24 478
|
[8] |
Sun L L and Peng R 2004 4th International Conference on Microwave and Millimeter Wave Technology, May 23-25, 2004, Beijing, China p. 891
|
[9] |
Sachin S and Harin D P 2008 9th International Symposium on Quality Electronic Design, March 17-19, 2008, San Jose, USA p. 445
|
[10] |
Li S M, Lee C L and Su C C 2009 IEEE Trans. on Very Large Scale Integration Systems 27 306
|
[11] |
Zhu Z M, Wan D J and Yang Y T 2010 Chin. Phys. B 19 097803
|
[12] |
En Y F, Zhu Z M and Hao Y 2010 Chin. Phys. Lett. 27 078401
|
[13] |
Zhu Z M, Wan D J and Yang Y T 2010 IEEE Electron Dev. Lett. 31 641
|
[14] |
Semiconductor Industry Assocaition 2010 International Technology Roadmap for Semiconductors
|
[15] |
Andrews R V 1955 Chem. Engin. Prog. 51 67
|
[16] |
Predictive Technology Model (PTM) http://www.eas.linebreak asu.edu/sim ptm/
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