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In situ high temperature X-ray diffraction studies of ZnO thin film |
Chen Xiang-Cun(陈香存), Zhou Jie-Ping(周解平), Wang Hai-Yang(王海洋), Xu Peng-Shou(徐彭寿), and Pan Guo-Qiang(潘国强)† |
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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Abstract An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction (XRD) patterns of the film show strong c-axis oriented crystal structure with preferred (002) orientation. The Phi-scan XRD pattern confirms that the epitaxial ZnO exhibits a single-domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and (002) peaks shift systematically toward lower 2θ values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.
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Received: 24 February 2011
Revised: 27 March 2011
Accepted manuscript online:
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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61.05.cp
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(X-ray diffraction)
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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Cite this article:
Chen Xiang-Cun(陈香存), Zhou Jie-Ping(周解平), Wang Hai-Yang(王海洋), Xu Peng-Shou(徐彭寿), and Pan Guo-Qiang(潘国强) In situ high temperature X-ray diffraction studies of ZnO thin film 2011 Chin. Phys. B 20 096102
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