CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition |
Chen Shan-Shan (陈珊珊), Wang Shu-Fang (王淑芳), Liu Fu-Qiang (刘富强), Yan Guo-Ying (闫国英), Chen Jing-Chun (陈景春), Wang Jiang-Long (王江龙), Yu Wei (于威), Fu Guang-Sheng (傅广生 ) |
The College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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Abstract High-temperature thermoelectric transport properties measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3 (001). Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω·cm and 202 μV/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.
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Received: 12 February 2012
Revised: 01 March 2012
Accepted manuscript online:
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PACS:
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73.50.Lw
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(Thermoelectric effects)
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72.80.Ga
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(Transition-metal compounds)
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81.15.Fg
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(Pulsed laser ablation deposition)
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Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 10904030) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091301120002). |
Corresponding Authors:
Wang Shu-Fang, Wang Jiang-Long
E-mail: swang2008@hotmail.com; wjl@hbu.edu.cn
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Cite this article:
Chen Shan-Shan (陈珊珊), Wang Shu-Fang (王淑芳), Liu Fu-Qiang (刘富强), Yan Guo-Ying (闫国英), Chen Jing-Chun (陈景春), Wang Jiang-Long (王江龙), Yu Wei (于威), Fu Guang-Sheng (傅广生 ) High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition 2012 Chin. Phys. B 21 087306
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