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Electron beam density study using a portable slit imaging system at the Shanghai Electron Beam Ion Trap |
Yang Yang(杨洋)a)b), Lu Di(路迪)a)b), Fu Yun-Qing(傅云清)a)b), Yao Ke(姚科)a)b), Chen Wei-Dong(陈卫东)a)b), Xiao Jun(肖君)a)b), Geng Zhi-Xian(耿志贤)a)b), Roger Huttona)b), and Zou Ya-Ming(邹亚明)a)b)† |
a The Key Laboratory of Applied Ion Beam Physics of Ministry of Education, Shanghai 200433, China; b Shanghai Electron Beam Ion Trap Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, China |
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Abstract In this work, a portable slit imaging system is developed to study both the electron beam diameter and the profile of the newly developed Shanghai Electron Beam Ion Trap (Shanghai EBIT). Images are detected by a charge coupled device (CCD) sensitive to both X rays and longer wavelength photons (up to visible). Large scale ray tracings were conducted for correcting the image broadening effects caused by the finite slit width and the finite width of the CCD pixels. A numerical de-convolution method was developed to analyse and reconstruct the electron beam density distribution in the EBIT. As an example of the measured beam diameter and current density, the FWHM (full width at half maximum) diameter of the electron beam at 81 keV and 120 mA is found to be 76.2 μm and the density 2.00 × 103 A·cm-2, under a magnetic field of 3 T, including all corrections.
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Received: 12 January 2011
Revised: 01 March 2011
Accepted manuscript online:
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PACS:
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07.05.Pj
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(Image processing)
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07.05.Rm
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(Data presentation and visualization: algorithms and implementation)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11074049), the Chinese National Fusion
Project for ITER (Grant No. 2009GB106001), and the Shanghai Leading Academic Discipline Project, China (Grant No. B107). |
Cite this article:
Yang Yang(杨洋), Lu Di(路迪), Fu Yun-Qing(傅云清), [mm] Yao Ke(姚科), Chen Wei-Dong(陈卫东), Xiao Jun(肖君), [mm]Geng Zhi-Xian(耿志贤), Roger Hutton, and Zou Ya-Ming(邹亚明) Electron beam density study using a portable slit imaging system at the Shanghai Electron Beam Ion Trap 2011 Chin. Phys. B 20 080701
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