Design and fabrication of a high-performance evanescently coupled waveguide photodetector

doi:10.1088/1674-1056/22/10/108503

Abstract In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

Keywords: high-performance diluted waveguide evanescent coupling waveguide photodiode

Received: 06 February 2013
Revised: 22 March 2013
Accepted manuscript online:

PACS:	85.60.Dw	(Photodiodes; phototransistors; photoresistors)
	42.81.Qb	(Fiber waveguides, couplers, and arrays)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the High Technology Research and Development Program of China (Grant Nos. 2012AA012202 and 2013AA031401), the National Basic Research Program of China (Grant No. 2012CB933503), and the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61021003).

Corresponding Authors: Yang Xiao-Hong, Han Qin
E-mail: xhyang@semi.ac.cn;hanqin@red.semi.ac.cn

Cite this article:

Liu Shao-Qing (刘少卿), Yang Xiao-Hong (杨晓红), Liu Yu (刘宇), Li Bin (李彬), Han Qin (韩勤) Design and fabrication of a high-performance evanescently coupled waveguide photodetector 2013 Chin. Phys. B 22 108503

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Design and fabrication of a high-performance evanescently coupled waveguide photodetector

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