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Chin. Phys. B, 2010, Vol. 19(12): 124208    DOI: 10.1088/1674-1056/19/12/124208
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Absorption and slow light effect of pulsed light in a triple semiconductor quantum well

Huang Zhong-Hua(黄忠华)a), Chen Ai-Xi(陈爱喜)b), Chen Zhao-Chu(陈召楚)b), and Deng Li(邓黎)b)
a School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China; b Department of Applied Physics, East China Jiaotong University, Nanchang 330013, China
Abstract  Under the condition of two different cases, the absorption of a pulsed probe field and its slow propagation in a triple semiconductor quantum well are investigated. The result shows that semiconductor medium becomes transparent due to the action of control field. Another result shows that by choosing appropriate physical parameters, the slow propagation of the input field can be achieved. The proposed scheme has some potential applications and may lead to the development of the controlled technique of optical buffers and optical delay lines.
Keywords:  slow light      semiconductor quantum well      group velocity  
Received:  14 April 2010      Revised:  16 May 2010      Accepted manuscript online: 
PACS:  78.67.De (Quantum wells)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2005CB724508), the National Natural Science Foundation of China (Grant No. 11065007), the Scientific Research Foundation of Jiangxi Provincial Department of Education, China (Grant No. GJJ10133), and the Foundation of Talent of Jinggang of Jiangxi Province, China (Grant No. 2008DQ00400).

Cite this article: 

Huang Zhong-Hua(黄忠华), Chen Ai-Xi(陈爱喜), Chen Zhao-Chu(陈召楚), and Deng Li(邓黎) Absorption and slow light effect of pulsed light in a triple semiconductor quantum well 2010 Chin. Phys. B 19 124208

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